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BAV99

Description
SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size45KB,2 Pages
ManufacturerTransys Electronics Limited
Websitehttp://www.transyselectronics.com
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SIGNAL DIODE

BAV99 Parametric

Parameter NameAttribute value
MakerTransys Electronics Limited
package instructionR-PDSO-G3
Reach Compliance Codeunknow
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.215 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage85 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transys
Electronics
L I M I T E D
SOT-23 Formed SMD Package
BAV99
SILICON PLANAR EPITAXIAL HIGH–SPEED DIODES
Silicon planar high-speed switching series diode pair
Marking
BAV99 = A7
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = ANODE
2 = CATHODE
3 = CATHODE/ANODE
2
1
3
ABSOLUTE MAXIMUM RATINGS
Continuous reverse voltage
Repetitive peak reverse voltage
Repetitive peak forward current
Junction temperature
Forward voltage at I
F
= 50 mA
Reverse recovery time when switched from
I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA
Recovery charge when switched from
I
F
= 10 mA to V
R
= 5 V; R
L
= 100
V
R
V
RRM
I
FRM
T
j
V
F
max.
max.
max.
max.
<
75
85
450
150
1,0
V
V
mA
°C
V
t
rr
Q
s
<
<
4 ns
45 pC
RATINGS (per diode)
(at T
A
= 25°C unless otherwise specified)
Limiting values
max.
Continuous reverse voltage
V
R
Repetitive peak reverse voltage
V
RRM
max.
75 V
85 V
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