BAW56W datasheet, PDF - EEWORLD Datasheet

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BAW56W: Description0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size46KB，1 Pages; ManufacturerTransys Electronics Limited; Websitehttp://www.transyselectronics.com

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BAW56W Overview

0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAW56W Parametric

Parameter Name	Attribute value
Maker	Transys Electronics Limited
Reach Compliance Code	unknow
ECCN code	EAR99
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
Maximum non-repetitive peak forward current	4 A
Maximum operating temperature	150 °C
Maximum output current	0.13 A
Maximum repetitive peak reverse voltage	85 V
Maximum reverse recovery time	0.004 µs
surface mount	YES

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Transys

Electronics

L I M I T E D

SOT-323 Plastic-Encapsulated Diode

BAW56W

FEATURES

1. 25¡ À0. 05

1. 01 R

EF

SWITCHING DIODE

SOT-323

Power dissipation

P

D

:

200

mW (Tamb=25℃)

1. 30¡ À0. 03

2. 30¡ À0. 05

Collector current

150 mA

I

O

:

Collector-base voltage

75

V

R

:

Operating and storage junction temperature range

T

J

, T

stg

: -55℃ to +150℃

Unit: mm

Marking: KJC

ELECTRICAL CHARACTERISTICS (Tamb=25℃

Parameter

Reverse breakdown voltage

Reverse voltage

leakage current

Symbol

V

(BR) R

I

R

unless otherwise specified)

Test

conditions

MIN

75

2.5

715

855

1000

1250

2

4

MAX

UNIT

V

I

R

= 100µA

V

R

=75V

I

F

=1mA

I

F

=10mA

I

F

=50mA

I

F

=150mA

V

R

=0V, f=1MHz

I

F

=I

R

=10mA

I

rr

=0.1×I

R

0. 30

Forward voltage

V

F

Diode capacitance

Reveres recovery time

C

D

t

rr

2. 00¡ À0. 05

µA

mV

pF

nS

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