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BD233

Description
2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
CategoryDiscrete semiconductor    The transistor   
File Size43KB,1 Pages
ManufacturerTransys Electronics Limited
Websitehttp://www.transyselectronics.com
Download Datasheet Parametric Compare View All

BD233 Overview

2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126

BD233 Parametric

Parameter NameAttribute value
MakerTransys Electronics Limited
package instruction,
Reach Compliance Codeunknown
Transys
Electronics
L I M I T E D
TO-126 Plastic-Encapsulated Transistors
BD233/235/237
FEATURES
Power dissipation
P
CM:
TRANSISTOR (NPN)
TO-126
1. EMITTER
1.25
W (Tamb=25℃)
2. COLLECTOR
3. BASE
Collector current
2
A
I
CM:
Collector-base voltage
BD233 : 45
V
V
(BR)CBO
:
BD235: 60
V
BD237: 100 V
Operating and storage junction temperature range
T
J :
150℃
T
stg
: -65℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
BD233
BD235
BD237
Collector-emitter breakdown voltage
BD233
BD235
BD237
Emitter-base breakdown voltage
Collector cut-off current
BD233
BD235
BD237
Emitter cut-off current
I
EBO
H
FE(1)
DC current gain
H
FE(2)
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
f
T
I
CBO
V(BR)
EBO
V(BR)
CEO
V(BR)
CBO
123
unless otherwise specified)
Test
conditions
MIN
45
Ic= 100
µ
A, I
E
=0
60
100
45
Ic= 10mA, I
B
=0
60
80
I
E
= 100
µ
A, I
C
=0
V
CB
= 45V, I
E
=0
V
CB
= 60V, I
E
=0
V
CB
= 100V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
= 2V, I
C
=150mA
V
CE
=2V, I
C
= 1A
I
C
=1A, I
B
= 100m A
V
CE
=10V, Ic=250mA
f =10MHz
3
40
25
0.6
V
MHz
1
mA
100
µA
5
V
V
V
MAX
UNIT
Symbol

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BD233 BD235 BD237 MMSTA42
Description 2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 POWER TRANSISTOR 2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
Maker Transys Electronics Limited Transys Electronics Limited Transys Electronics Limited Transys Electronics Limited
Reach Compliance Code unknown unknow unknow unknow
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