Transys
Electronics
L I M I T E D
NPN POWER TRANSISTORS
BU508F, BU508AF,
BU508DF
TO- 3P Fully Isolated
Plastic Package
B
C
E
Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Total Power Dissipation upto T
a
=25º C
T
c
=25º C
Storage Temperature Range
Max Operating Junction Temperature
THERMAL RESISTANCE
Thermal Resistance Junction - Case
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
VALUE
1500
700
5
8
15
34
60
- 65 to +150
150
UNIT
V
V
V
A
W
ºC
ºC
R
th (j-c)
2.08
ºC/W
ELECTRICAL CHARACTERISTICS (T
C
=25ºC unless specified otherwise)
.
TEST CONDITIONS
DESCRIPTION
SYMBOL
I
CES
V
CE
=V
CES
, V
BE
=0
Collector Cut off Current
V
CEO (sus)
*
I
B
=0, I
C
=100mA
Collector Emitter Sustaining Voltage
V
EBO
I
E
=10mA, I
C
=0
Emitter Base Voltage
BU508F, AF
I
EBO
V
EB
=5V, I
C
=0
Emitter Cut-off Current
BU508DF
h
FE
I
C
=4.5A, V
CE
=5V
DC Current Gain
V
F
I
F
=4.0A
Diode forward Voltage
BU508DF
V
CE(sat) *
I
C
=4.5A, I
B
=2.0A
Collector Emitter Saturation Voltage
BU508AF, DF
I
C
=4.5A, I
B
=2.0A
BU508F
Base Emitter Saturation Voltage
V
BE(sat) *
I
C
=4.5A, I
B
=2.0A
SWITCHING TIME
Storage Time
Fall Time
MIN
700
5.0
TYP
MAX
1.0
UNIT
mA
V
V
mA
300
2.25
2.0
1.0
5.0
1.5
V
V
V
V
t
s
t
f
I
C
=4.5A,h
FE
=2.5,V
CC
=140V
L
C
=0.9mH, L
B
=3µH
7.0
0.5
µs
µs
* Pulse test: Pulse Duration <300µs , Duty cycle < 1.5%.
µ
Electronics Design Contest
京公网安备 11010802033920号
EEWORLD
