numbers reflect the limitations of the test circuit rather than the
device itself.
IS
≤
-
ID
21A
di
/
dt
≤
700A/µs
VR
≤
VDSS TJ
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.45
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
0.40
0.35
0.30
0.25
0.9
0.7
0.5
0.20
0.15
0.10
0.05
0
10
-5
0.1
0.05
10
-4
0.3
Note:
PDM
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x Z
θJC
+ TC
050-7054 Rev D
9-2004
SINGLE PULSE
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
60
VGS =15 &10V
I
D
, DRAIN CURRENT (AMPERES)
APT6029BLL_SLL
8V
7V
50
40
30
20
10
0
RC MODEL
Junction
temp. (°C)
0.161
Power
(watts)
0.259
Case temperature. (°C)
0.236F
0.00994F
6.5
6V
5.5V
5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
R
DS(ON)
, DRAIN-TO-SOURCE ON RESISTANCE
80
I
D
, DRAIN CURRENT (AMPERES)
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
V
GS
70
60
50
40
30
20
10
0
VDS> ID (ON) x RDS(ON) MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
= 10V @ I = 10.5A
D
1.30
1.20
1.10
1.00
0.90
0.80
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
0
2
4
6
8
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
0
25
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.15
10
20
30
40
50
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS(ON)
vs DRAIN CURRENT
I
D
, DRAIN CURRENT (AMPERES)
20
1.10
15
1.05
10
1.00
5
0.95
R
DS(ON)
, DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I
D
0
25
0.90
-50
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
= 10.5A
= 10V
V
2.0
1.5
1.0
V
GS(TH)
, THRESHOLD VOLTAGE
(NORMALIZED)
GS
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, R
DS(ON)
vs. TEMPERATURE
-25
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7054 Rev D
9-2004
84
I
D
, DRAIN CURRENT (AMPERES)
10,000
OPERATION HERE
LIMITED BY RDS (ON)
APT6029BLL_SLL
Ciss
50
100µS
10
C, CAPACITANCE (pF)
1,000
Coss
100
Crss
I
D
= 21A
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
10
100
600
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
VDS=100V
12
VDS=250V
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
1mS
10mS
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
10
VDS=400V
TJ =+150°C
TJ =+25°C
10
8
4
20 30 40 50 60 70 80 90 100
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
50
t
d(off)
40
0
0
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
50
40
V
DD
G
t
d(on)
and t
d(off)
(ns)
= 400V
30
t
r
and t
f
(ns)
R
= 5Ω
30
V
DD
G
t
f
= 400V
T = 125°C
J
L = 100µH
20
20
R
= 5Ω
T = 125°C
J
t
r
L = 100µH
10
t
d(on)
10
0
0
15
20
25
30
35
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
G
5
10
15
20
25
30
35
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
800
V
= 400V
0
0
5
10
700
= 400V
600
SWITCHING ENERGY (µJ)
R
= 5Ω
700
SWITCHING ENERGY (µJ)
DD
I
T = 125°C
J
D
J
= 21A
E
off
T = 125°C
500
400
300
200
100
L = 100µH
E
ON
includes
diode reverse recovery.
E
on
600
500
400
300
200
100
L = 100µH
E
ON
includes
diode reverse recovery.
E
on
9-2004
E
off
050-7054 Rev D
15
20
25
30
35
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
APT6029BLL_SLL
10 %
Gate Voltage
90%
t
d(on)
t
r
Drain Current
TJ = 125 C
Gate Voltage
t
d(off)
Drain Voltage
T = 125 C
J
90%
5%
10 %
Switching Energy
5%
Drain Voltage
90%
tf
10%
Drain Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF60
V
DD
I
D
V
DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
3
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
1.04 (.041)
1.15 (.045)
Drain
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
20.32 (.800)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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