MBR12035R datasheet, PDF - EEWORLD Datasheet

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MBR12035R: Description120 A, 80 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size103KB，2 Pages; ManufacturerTransys Electronics Limited; Websitehttp://www.transyselectronics.com

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MBR12035R Overview

120 A, 80 V, SILICON, RECTIFIER DIODE

MBR12035R Parametric

Parameter Name	Attribute value
Maker	Transys Electronics Limited
Reach Compliance Code	unknow
Is Samacsys	N
Base Number Matches	1

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Transys

Electronics

L I M I T E D

MBR12020(R)

THRU

MBR120100(R)

SCHOTTKY DIODES MODULE TYPE 120A

Features

High Surge Capability

Types Up to 100V V

RRM

120Amp Rectifier

20-100 Volts

HALF PACKAGE

Maximum Ratings

Operating Temperature: -40 C to +175

Storage Temperature: -40 C to +175

Part Number

Maximum

Recurrent

Peak Reverse

Voltage

20V

30V

35V

40V

45V

60V

80V

100V

Maximum DC

Blocking

Voltage

20V

30V

35V

40V

45V

60V

80V

100V

Maximum

RMS Voltage

14V

21V

25V

28V

32V

42V

56V

70V

MBR12020( R )

MBR12030( R )

MBR12035( R )

MBR12040( R )

MBR12045( R )

MBR12060( R )

MBR12080( R )

MBR120100( R )

Electrical Characteristics @ 25

Average Forward

Current

Peak Forward Surge

Current

Maximum

NOTE (1)

Instantaneous

Forward Voltage

Maximum

Instantaneous

Reverse Current At

Rated DC Blocking

NOTE (1)

Voltage

F(AV)

FSM

Unless Otherwise Specified

120A

2000A

0.65V

0.75V

0.84V

Baseplate

Common Cathode

Baseplate

R=Common Anode

=136

DIMENSIONS

INCHES

MIN

MAX

1.515

1.560

.725

.775

.595

.625

1.192

.1.182

.745

.755

.152

.160

- 20

1/4

.540

.580

.156

.160

.505

.495

.130

.120

MIN

38.48

18.42

15.11

30.02

18.92

3.86

UNC

13.72

3.96

12.57

3.05

MAX

39.62

19.69

15.88

30.28

19.18

4.061

- 2B

14.73

4.06

12.83

3.30

NOTE

8.3ms , half sine

(MBR12020~MBR12045)

(MBR12060)

(MBR12080~MBR120100)

=120 A; T

= 25

4.0

250

= 25

=125

Maximum Thermal

Resistance Junction

To Case

R jc

0.8

DIM

NOTE :

(1)

Pulse Test: Pulse Width 300 usec, Duty Cycle

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