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RB400D

Description
0.5 A, 40 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size65KB,1 Pages
ManufacturerTransys Electronics Limited
Websitehttp://www.transyselectronics.com
Download Datasheet Parametric View All

RB400D Overview

0.5 A, 40 V, SILICON, SIGNAL DIODE

RB400D Parametric

Parameter NameAttribute value
MakerTransys Electronics Limited
Reach Compliance Codeunknow
ECCN codeEAR99
SOT-23-3L
RB400D
-
Schottky barrier Diodes
0.
0. 95¡ À 025
FEATURES
Small surface mounting type
Low reverse current and low forward voltage
High reliability
+
1. 02
2. 80¡ À 05
0.
1. 60¡ À0. 05
Maximum Ratings and Electrical Characteristics, Single Diode @T
A
=25℃
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
O
I
FSM
T
j
T
stg
Limits
40
40
500
3
125
-40~+125
Unit
V
V
mA
A
Electrical Ratings @T
A
=25℃
Parameter
Forward voltage
Reverse current
I
R2
C
T
Capacitance between terminals
C
T
20
pF
V
R
=10V, f=1MHZ
125
30
µA
Symbol
V
F
I
R1
Min.
Typ.
Max.
0.55
50
Unit
V
µA
Conditions
I
F
=0.5A
V
R
=30V
V
R
=10V
V
R
=0V, f=1MHZ
pF
0. 35
Marking: D3A
2. 92¡ À0. 05
1. 9

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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