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SB157/106C025-20-W-Ag/Al

Description
Schottky cr Barrier Diode Wafer 157 x 106 Mils, 25 Volt, 20 Amp, 0.39VF.
File Size152KB,1 Pages
ManufacturerTransys Electronics Limited
Websitehttp://www.transyselectronics.com
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SB157/106C025-20-W-Ag/Al Overview

Schottky cr Barrier Diode Wafer 157 x 106 Mils, 25 Volt, 20 Amp, 0.39VF.

SB157/106C025-20-W-Ag/Al
Schottky cr Barrier Diode Wafer
157 x 106 Mils, 25 Volt, 20 Amp, 0.39V
F.
Data Sheet
Features
Oxide Passivated Junction
Very Low Forward Voltage
125 º C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Chromium Barrier
>1000V ESD (MM)
Cr-Al-Ni-Ag - Suffix "Ag"
or
Cr-Al (Suffix Al).
Anode
Cathode
Ti-Ni-Ag
Symbol
Electrical Characteristics @ 25
C
Maximum Repetitive Reverse Voltage (2)
Maximum Forward Voltage @ I
F
= 20A (1)(2)
Typical Average Forward Rectified Current (2)
Reverse Leakage Current @ V
R
= 25V (2)
Reverse Leakage Current @ V
R
= 25V, 125
O
C (2)
ESD Machine Model (MM)
Junction Operating Temperature Range (2)
Storage Temperature Range (2)
Symbol Unit
V
RRM
V
F
I
F(AV)
I
R(1)
I
R(2)
V
ESD(mm)
T
J
T
SG
Volt
Volt
Amp
SB157/106C025-20-W-Ag/Al (See ordering code below)
25
0.39
20
10
400
>1000
-45 to +125
-45 to +125
e.g.
mA
mA
Volt
C
C
(1) Pulse Width tp = < 300µS, Duty Cycle <2%
(2) The characteristics above assume the die are assembled in
industry standard packages using appropriate attach methods.
Ordering Code
SB065C040-3-W-Ag
Schottky Barrier
65 Mils
CR Barrier 40Volt 3 Amp Wafer CR/Ti/Ni/Ag
Mechanical Dimensions
Wafer
Die
Wafer Diameter - 100 mm (4")
Wafer Thickness 420 +/- 20
Top (Anode) - CR/Ti/Ni/Ag (Suffix "Ag")
or Cr-Al (Suffix Al).
Bottom (cathode) Ti/Ni/Ag
Scribe line Width
80 µM
99
(2.520)
106
(2.700)
150
(3.820)
157
(4.000)
420 +/- 20 µm
Third Angle Protection
The information in this datasheet does not form part of any contract, quotation
guarantee,warranty or representation, it has been produced in good faith and is believed
to be accurate and may be changed without notice at anytime. Liability will not be
accepted by Transys Electronics LTD for any consequences whatsoever in its use. This
publication does not convey nor imply any license under patent or other
intellectual/industrial property rights. The products within this specification are not
designed for use in any
life support apparatus
whatsoever where malfunction can be
reasonably expected to cause personal injury or death. Customers using these products
in the aforementioned applications do so at their own risk and agree to fully indemnify
Transys Electronics LTD for any damage/ legal fees either direct, incidental or
consequential from this improper use or sale.
Dimensions in mils (mm)
Transys Electronics LTD
Email:
sales@transyselectronics.com
Website:
www.transyselectronics.com
Tel: + 44 (0) 121 776 6321
Fax: + 44 (0) 121 776 6997
SCD0975-1
Page 1 of 1

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SB157/106C025-20-W-Ag/Al 106C025-20-W-AG
Description Schottky cr Barrier Diode Wafer 157 x 106 Mils, 25 Volt, 20 Amp, 0.39VF. Schottky cr Barrier Diode Wafer 157 x 106 Mils, 25 Volt, 20 Amp, 0.39VF.

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