1N4004 datasheet, PDF - EEWORLD Datasheet

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1N4004: Description1 A, 400 V, SILICON, SIGNAL DIODE, DO-41; Categorysemiconductor Discrete semiconductor; File Size52KB，1 Pages; ManufacturerFCI [First Components International]

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1N4004 Overview

1 A, 400 V, SILICON, SIGNAL DIODE, DO-41

1N4004 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	CASE R-1, 2 PIN
state	ACTIVE
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
Terminal location	AXIAL
Packaging Materials	UNSPECIFIED
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	Signal diode
Maximum repetitive peak reverse voltage	400 V
Maximum average forward current	1 A

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Data Sheet

250 mW EPITAXIAL

PLANAR DIODES

Mechanical Dimensions

JEDEC

D0-35

.060

.090

.120

.200

1.00 Min.

Description

1N914

.018

.022

Features

n

PLANAR PROCESS

n

250 mW POWER DISSIPATION

n

INDUSTRY STANDARD D0-35

PACKAGE

n

MEETS UL SPECIFICATION 94V-0

1N914

Maximum Ratings

Peak Reverse Voltage...V

RM

RMS Reverse Voltage...V

R(rms)

Average Forward Rectified Current...I

O

Non-Repetitive Peak Forward Surge Current...I

FSM

Power Dissipation...P

D

Operating Temperature Range...T

J

Storage Temperature Range...T

STRG

Electrical Characteristics

Maximum Forward Voltage...V

F

@ I

F

= 100 mA

Maximum DC Reverse Current...I

R

@ V

R

= 70v

Maximum Frequency ...f

Maximum Diode Capacitance, V

R

= 6V, f = 1MHz...C

D

Maximum Reverse Recovery Time...t

RR

.01 uF

P

VV

= 100nS

5K Ohms

50 Ohms

R

G

= 50 Ohms

Page 8-2

1N914

80

Units

Volts

............................................. 100 ............................................... mAmps

............................................. 300 ............................................... mAmps

mW

............................................. 250 ...............................................

°C

......................................... -25 to 85 ..........................................

°C

......................................... -55 to 125 ..........................................

............................................. 1.2 ...............................................

.............................................

0.1

100

3.5

4.0

Volts

...............................................

µAmps

............................................... MHz

pF

...............................................

ns

...............................................

Test

Device Under Test

Output

I

F

I

R

Trr

0.1 I

R

1N4004 Related Products

	1N4004	1N4001	1N4003	1N4007	1N4006	1N4005
Description	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	1 A, SILICON, SIGNAL DIODE	1 A, SILICON, SIGNAL DIODE, DO-41	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41	1 A, 800 V, SILICON, SIGNAL DIODE, DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
Number of terminals	2	2	2	2	2	2
Number of components	1	1	1	1	1	1
Processing package description	CASE R-1, 2 PIN	MINIATURE PACKAGE-2	ALF-2, DO-41, 2 PIN	PLASTIC PACKAGE-2	ROHS COMPLIANT, PLASTIC, DO-204AL, 2 PIN	PLASTIC PACKAGE-2
state	ACTIVE	ACTIVE	TRANSFERRED	ACTIVE	ACTIVE	ACTIVE
packaging shape	round	round	round	round	ROUND	round
Package Size	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Terminal form	Wire	Wire	Wire	Wire	WIRE	Wire
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Packaging Materials	UNSPECIFIED	UNSPECIFIED	Glass	Plastic/Epoxy	PLASTIC/EPOXY	Plastic/Epoxy
structure	single	single	single	single	SINGLE	single
Shell connection	isolation	isolation	isolation	isolation	ISOLATED	isolation
Diode component materials	silicon	silicon	silicon	silicon	SILICON	silicon
Diode type	Signal diode	Signal diode	Signal diode	Signal diode	SIGNAL DIODE	Signal diode
Maximum average forward current	1 A	1 A	1 A	1 A	1 A	1 A
Maximum repetitive peak reverse voltage	400 V	-	-	1000 V	800 V	600 V

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