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1N6289ARL

Description
1500W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size100KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

1N6289ARL Overview

1500W, UNIDIRECTIONAL, SILICON, TVS DIODE

1N6289ARL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresHIGH RELIABILITY, UL RECOGNIZED , LOW IMPEDANCE
Maximum breakdown voltage58.8 V
Minimum breakdown voltage53.2 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
Nominal reference voltage56 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current1 mA
Base Number Matches1
1N6267A Series
1500 Watt MOSORB Zener
Transient Voltage Suppressors
Unidirectional and Bidirectional
GENERAL DATA IS APPLICABLE TO ALL
SERIES IN THIS GROUP
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are ON
Semiconductor’s exclusive, cost-effective, highly reliable Surmetic
axial leaded package and are ideally-suited for use in communication
systems, numerical controls, process controls, medical equipment,
business machines, power supplies and many other
industrial/consumer applications, to protect CMOS, MOS and Bipolar
integrated circuits.
Specification Features:
http://onsemi.com
MOSORB ZENER TVS
6.2–250 VOLTS
1500 WATT PEAK POWER
5 WATTS STEADY STATE
Standard Voltage Range — 6.2 to 250 V
Peak Power — 1500 Watts @ 1 ms
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
µA
Above 10 V
UL Recognition
Response Time is Typically < 1 ns
PLASTIC
CASE 41A
ORDERING INFORMATION
Device
1.5KEXXXA
1.5KEXXXARL4
Package
CASE 41A
CASE 41A
Shipping
500 Units/Box
Tape and Reel
1500 Units/Reel
500 Units/Box
Tape and Reel
1500 Units/Reel
500 Units/Box
Tape and Reel
1500 Units/Reel
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
POLARITY:
Cathode indicated by polarity band. When operated in
zener mode, will be positive with respect to anode
MOUNTING POSITION:
Any
WAFER FAB LOCATION:
Phoenix, Arizona
ASSEMBLY/TEST LOCATION:
Guadalajara, Mexico
MAXIMUM RATINGS
Rating
Peak Power Dissipation (1)
@ TL
25°C
Steady State Power Dissipation
@ TL
75°C, Lead Length = 3/8″
Derated above TL = 75°C
Forward Surge Current (2)
@ TA = 25°C
Operating and Storage Temperature
Range
Symbol
PPK
PD
Value
1500
5
50
IFSM
TJ, Tstg
200
– 65 to
+175
Unit
Watts
Watts
mW/°C
Amps
°C
1.5KEXXXCA
Bidirectional
1.5KEXXXCARL4
Bidirectional
1N6XXXA
1N6XXXARL
CASE 41A
CASE 41A
CASE 41A
CASE 41A
Devices listed in
bold, italic
are ON Semiconductor
Preferred
devices.
Preferred
devices are recommended
choices for future use and best overall value.
Lead temperature not less than 1/16″ from the case for 10 seconds: 230°C
NOTES: 1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 2.
NOTES:
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute
maximum.
©
Semiconductor Components Industries, LLC, 1999
1
December, 1999 – Rev. 2
Publication Order Number:
1N6267A/D
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