HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Data Sheet
January 2000
File Number
4368.1
7A, 600V, UFS Series N-Channel IGBTs
The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and
the low on-state conduction loss of a bipolar transistor. The
much lower on-state voltage drop varies only moderately
between 25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays and
contactors.
Formerly Developmental Type TA49192.
Features
• 7A, 600V, T
C
= 25
o
C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . .115ns at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC TO-220AB
E
COLLECTOR
(FLANGE)
C
G
Ordering Information
PART NUMBER
HGTD3N60B3S
HGT1S3N60B3S
HGTP3N60B3
PACKAGE
TO-252AA
TO-263AB
TO-220AB
BRAND
G3N60B
G3N60B3
G3N60B3
COLLECTOR
(FLANGE)
G
E
JEDEC TO-263AB
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g.
HGTD3N60B3S9A.
Symbol
JEDEC TO-252AA
C
COLLECTOR
(FLANGE)
G
E
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. A
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
UNITS
V
A
A
A
V
V
W
W/
o
C
mJ
o
C
o
C
µ
s
µ
s
HGTD3N60B3S, HGT1S3N60B3S
HGTP3N60B3
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
7.0
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
At T
C
= 110
3.5
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 12V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
20
±
20
±
30
18A at 600V
33.3
0.27
100
-55 to 150
260
5
10
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 82
Ω.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
TEST CONDITIONS
I
C
= 250
µ
A, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= BV
CES
T
C
= 25
o
C
T
C
= 150
o
C
MIN
600
20
-
-
-
-
4.5
-
V
CE
= 600V
18
TYP
-
28
-
-
1.8
2.1
5.4
-
-
MAX
-
-
250
2.0
2.1
2.5
6.0
±
250
-
UNITS
V
V
µ
A
mA
V
V
V
nA
A
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
T
C
= 150
o
C
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
GE(TH)
I
GES
SSOA
I
C
= 250
µ
A, V
CE
= V
GE
V
GE
=
±
20V
T
J
= 150
o
C
R
G
= 82
Ω
V
GE
= 15V
L = 500
µ
H
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GEP
Q
g(ON)
I
C
= I
C110
, V
CE
= 0.5 BV
CES
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
V
GE
= 20V
-
-
-
-
-
-
-
-
-
7.9
18
21
18
16
105
70
66
88
-
22
25
-
-
-
-
75
160
V
nC
nC
ns
ns
ns
ns
µ
J
µ
J
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
IGBT and Diode at T
J
= 25
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
Ω
L = 1mH
Test Circuit (Figure 17)
©2001 Fairchild Semiconductor Corporation
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. A
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
R
θJC
TEST CONDITIONS
IGBT and Diode at T
J
= 150
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
Ω
L = 1mH
Test Circuit (Figure 17)
MIN
-
-
-
-
-
-
-
TYP
16
18
220
115
130
210
-
MAX
-
-
295
175
140
325
3.75
UNITS
ns
ns
ns
ns
µJ
µJ
o
C/W
Typical Performance Curves
7
I
CE
, DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
18
16
14
12
10
8
6
4
2
0
0
100
200
300
400
500
600
700
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
GE
= 15V
6
5
4
3
2
1
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
T
J
= 150
o
C, R
G
= 82Ω, V
GE
= 15V, L = 500µH
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
200
f
MAX
, OPERATING FREQUENCY (kHz)
100
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
T
J
= 150
o
C, R
G
= 82Ω, L = 1mH, V
CE
= 480V
T
C
75
o
C
75
o
C
110
o
C
110
o
C
V
GE
15V
10V
15V
10V
V
CE
= 360V, R
G
= 82Ω, T
J
= 125
o
C
14
I
SC
12
10
8
t
SC
6
4
10
11
12
13
14
V
GE
, GATE TO EMITTER VOLTAGE (V)
20
15
15
40
35
30
25
10
f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 3.75
o
C/W, SEE NOTES
1
2
3
4
5
6
7
8
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. A
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
16
45
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
14
12
10
T
C
= 150
o
C
8
6
T
C
= 25
o
C
4
2
0
0
1
2
3
4
5
6
7
8
9
10
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE <0.5%, V
GE
= 10V
PULSE DURATION = 250µs
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
30
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250µs
25
20
15
10
T
C
= 25
o
C
5
0
0
1
2
3
4
5
6
7
8
9
10
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
T
C
= -55
o
C
T
C
= -55
o
C
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
0.7
0.6
0.5
0.4
0.3
0.2
0.1
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
0
1
2
3
4
5
6
7
8
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
E
ON
, TURN-ON ENERGY LOSS (mJ)
R
G
= 82Ω, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
0.6
R
G
= 82Ω, L = 1mH, V
CE
= 480V
0.5
T
J
= 150
o
C; V
GE
= 10V OR 15V
0.4
0.3
0.2
0.1
0
1
2
3
4
5
6
7
8
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C; V
GE
= 10V OR 15V
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
80
45
R
G
= 82Ω, L = 1mH, V
CE
= 480V
t
dI
, TURN-ON DELAY TIME (ns)
40
35
30
25
20
15
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
10
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
t
rI
, RISE TIME (ns)
R
G
= 82Ω, L = 1mH, V
CE
= 480V
70
60
50
40
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
30
20
10
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. A
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Typical Performance Curves
250
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
R
G
= 82Ω, L = 1mH, V
CE
= 480V
225
200
175
T
J
= 150
o
C, V
GE
= 10V
150
125
100
T
J
= 25
o
C, V
GE
= 10V
75
60
1
2
3
4
5
6
7
8
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
2
3
4
5
6
7
8
T
J
= 25
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 15V
t
fI
, FALL TIME (ns)
Unless Otherwise Specified
(Continued)
140
R
G
= 82Ω, L = 1mH, V
CE
= 480V
120
T
J
= 150
o
C, V
GE
= 10V OR 15V
100
80
T
J
= 25
o
C, V
GE
= 10V OR 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
30
PULSE DURATION = 250µs
25
T
C
= -55
o
C
20
15
10
5
0
5
6
7
8
9
10
11
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
C
= 25
o
C
15
I
g(REF)
= 1mA, R
L
= 171Ω, T
C
= 25
o
C
12
9
T
C
= 150
o
C
6
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
3
0
12
13
14
15
0
5
10
15
20
25
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORM
500
FREQUENCY = 1MHz
400
C, CAPACITANCE (pF)
C
IES
300
200
C
OES
100
C
RES
0
0
5
10
15
20
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
©2001 Fairchild Semiconductor Corporation
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. A
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