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2SC6036

Description
Silicon NPN epitaxial planar type
CategoryDiscrete semiconductor    The transistor   
File Size377KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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2SC6036 Overview

Silicon NPN epitaxial planar type

2SC6036 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)270
JESD-30 codeR-PDSO-F3
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Bismuth (Sn/Bi)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
Transistors
2SC6036
Silicon NPN epitaxial planar type
For general amplification
Complementary to
2SA2162
0.33
+0.05
−0.02
Unit: mm
0.10
+0.05
−0.02
Features
Low collector-emitter saturation voltage V
CE(sat)
SSS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
3
0.15 min.
0.80
±0.05
1.20
±0.05
0.52
±0.03
0 to 0.01
0.15 min.
0.23
+0.05
−0.02
1
2
(0.40) (0.40)
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
15
12
5
500
1
100
125
–55 to +125
Unit
V
V
V
mA
A
mW
°C
°C
1: Base
2: Emitter
3: Collecter
0.80
±0.05
1.20
±0.05
SSSMini3-F1 Package
Marking Symbol :
4U
Electrical Characteristics
T
a
=
25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
1
mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
V
CB
=
10
V, I
E
=
0
V
CE
=
2
V, I
C
=
10
mA
I
C
=
200
mA, I
B
=
10
mA
V
CB
=
2
V, I
E
= –10 mA, f =
200
MHz
V
CB
=
10
V, f =
1
MHz
200
4.5
270
Min
15
12
5
0.1
680
250
Typ
Max
Unit
V
V
V
µA
mV
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7030
measuring methods for transistors.
0.15 max.
Publication date : December
2004
SJC00324AED
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