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BAV70

Description
0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size89KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BAV70 Overview

0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE

BAV70 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
Reach Compliance Codeunknown
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-609 codee0
Maximum non-repetitive peak forward current2 A
Maximum operating temperature150 °C
Maximum output current0.215 A
Maximum repetitive peak reverse voltage70 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
BAV70 series
High-speed switching diodes
Rev. 07 — 27 November 2007
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Package
NXP
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
SOT23
SOT883
SOT363
SOT416
SOT323
JEITA
-
SC-101
SC-88
SC-75
SC-70
JEDEC
-
-
-
-
Package
configuration
Configuration
dual common cathode
dual common cathode
quadruple common
cathode/common cathode
dual common cathode
dual common cathode
Type number
TO-236AB small
leadless ultra
small
very small
ultra small
very small
1.2 Features
I
High switching speed: t
rr
4 ns
I
Low leakage current
I
Small SMD plastic packages
I
Low capacitance: C
d
1.5 pF
I
Reverse voltage: V
R
100 V
1.3 Applications
I
High-speed switching
I
General-purpose switching
1.4 Quick reference data
Table 2.
Symbol
Per diode
I
R
V
R
t
rr
[1]
Quick reference data
Parameter
reverse current
reverse voltage
reverse recovery time
[1]
Conditions
V
R
= 80 V
Min
-
-
-
Typ
-
-
-
Max
0.5
100
4
Unit
µA
V
ns
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.

BAV70 Related Products

BAV70 BAV70M BAV70S BAV70T BAV70W
Description 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 85 V, 4 ELEMENT, SILICON, SIGNAL DIODE 0.075 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Is it Rohs certified? incompatible conform to conform to conform to conform to
Maker NXP NXP NXP NXP NXP
Reach Compliance Code unknown compli compliant compli compliant
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 0.715 V 1.3 V 0.715 V 1.25 V
JESD-609 code e0 e3 e3 e3 e3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 0.215 A 0.75 A 0.1 A 0.75 A 0.1 A
Maximum repetitive peak reverse voltage 70 V 100 V 100 V 100 V 100 V
Maximum reverse recovery time 0.006 µs 0.004 µs 0.004 µs 0.004 µs 0.004 µs
surface mount YES YES YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Maximum non-repetitive peak forward current 2 A 1 A - 4 A 4 A
Base Number Matches 1 - 1 - 1
Is it lead-free? - Lead free Lead free Lead free Lead free
Parts packaging code - SC-101 SC-88 SC-75 SC-70
package instruction - 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN PLASTIC, SMD, SC-88, 6 PIN R-PDSO-G3 R-PDSO-G3
Contacts - 3 6 3 3
ECCN code - EAR99 EAR99 - EAR99
Configuration - COMMON CATHODE, 2 ELEMENTS 2 BANKS, COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials - SILICON SILICON SILICON SILICON
JESD-30 code - R-PDSO-N3 R-PDSO-G6 R-PDSO-G3 R-PDSO-G3
Humidity sensitivity level - 1 1 1 1
Number of components - 2 4 2 2
Number of terminals - 3 6 3 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260 260 260
Maximum power dissipation - 0.25 W 0.35 W 0.17 W 0.2 W
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified
Terminal form - NO LEAD GULL WING GULL WING GULL WING
Terminal location - DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature - 30 30 30 30
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