G8421_06 datasheet, PDF - EEWORLD Datasheet

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G8421_06: DescriptionInGaAs PIN photodiode; File Size125KB，4 Pages; ManufacturerHamamatsu; Websitehttp://www.hamamatsu.com

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G8421_06 Overview

InGaAs PIN photodiode

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PHOTODIODE

InGaAs PIN photodiode

G8421/G8371/G5851 series

Long wavelength type

Features

Applications

Long cut-off wavelength: 1.9 µm

Optical power meter

3-pin TO-18 package: low price

Gas analyzer

Thermoelectrically cooled TO-18 package: low dark current

NIR (near infrared) photometry

Active area:

φ0.3

φ3

Accessories (Optional)

Specifications / Absolute maximum ratings

Di mensional

outline/

Package

Window

material

➀

➁

➂

Active

area

(mm)

φ0.3

φ0.5

φ1

φ3

φ0.3

φ1

φ3

φ0.3

φ1

φ3

Heatsink for one-stage TE-cooled type A3179

Heatsink for two-stage TE-cooled type A3179-01

Temperature controller for TE-cooled type C1103-04

Thermistor

power

dissipation

(mW)

Absolute maximum ratings

Storage

TE-cooler Reverse Operating

allowable voltage temperature temperature

Topr

Tstg

current

(A)

(V)

(°C)

Type No.

Cooling

G8421-03

G8421-05

G8371-01

G8371-03

G5851-103

G5851-11

G5851-13

G5851-203

G5851-21

G5851-23

TO-18

TO-5

TO-8

Non-cooled

-40 to +85

-55 to +125

One-stage

TE-cooled

Two-stage

TE-cooled

1.5

0.2

1.0

-40 to +70

-55 to +85

➃

TO-8

Electrical and optical characteristics (Typ. unless otherwise noted)

M easure ment

Peak

Spectral

Photo

Condition

response sensitivity sensitivity

wavelength

range

Element

temperature

λp

λ=λp

(°C)

G8421-03

G8421-05

G8371-01

G8371-03

G5851-103

G5851-11

G5851-13

G5851-203

G5851-21

G5851-23

(µm)

0.9 to 1.9

(µm)

Cut-off

frequency

Dark current

=1 V

=50

Ω

-3 dB

Min. Typ. Typ.

Max.

(MHz)

(A/W) (A/W) (nA)

(nA)

300

100

500

100

1000

2000 20000

100

0.9 1.1

100

200

2000

1.5

100

1000

Terminal

capacitance Shunt

resistance

Rsh

=1 V V

= 10 m V

f=1 MHz

(pF)

800

(MΩ)

1.5

0.5

0.05

0.5

∗

λ=λp

NEP

λ=λp

Type No.

-10

0.9 to 1.87

1.75

-20

0.9 to 1.85

(c m· Hz

1/2

/ W) (W/Hz

1/2

)

9 × 10

-14

1.5 × 10

-13

5 × 10

2 × 10

-13

8 × 10

-13

3 × 10

-14

1.5 × 10

6 × 10

-14

2 × 10

-13

2 × 10

-14

2.5 × 10

4 × 10

-14

1.5 × 10

-13

G8421/G8371/G5851 series may be damaged by Electro Static Discharge, etc. Be carefull when using

G8421/G8371/G5851 series.

G8421_06 Related Products

	G8421_06	G8421-03	G8421-05	G5851-21	G5851-23	G5851-203	G5851-13	G5851-11	G5851-103
Description	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode	InGaAs PIN photodiode
package instruction	-	TO-18, 3 PIN	TO-18, 3 PIN	TO-8, 6 PIN	TO-8, 6 PIN	TO-8, 6 PIN	TO-8, 6 PIN	TO-8, 6 PIN	TO-8, 6 PIN
Reach Compliance Code	-	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Configuration	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum dark power	-	300 nA	500 nA	50 nA	1000 nA	15 nA	2000 nA	100 nA	30 nA
Infrared range	-	YES	YES	YES	YES	YES	YES	YES	YES
Number of functions	-	1	1	1	1	1	1	1	1
Maximum operating temperature	-	85 °C	85 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
Minimum operating temperature	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Optoelectronic device types	-	PIN PHOTODIODE	PIN PHOTODIODE	PIN PHOTODIODE	PIN PHOTODIODE	PIN PHOTODIODE	PIN PHOTODIODE	PIN PHOTODIODE	PIN PHOTODIODE
peak wavelength	-	1750 nm	1750 nm	1750 nm	1750 nm	1750 nm	1750 nm	1750 nm	1750 nm
Minimum reverse breakdown voltage	-	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
shape	-	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
size	-	0.3 mm	0.5 mm	1 mm	3 mm	0.3 mm	3 mm	1 mm	0.3 mm
Base Number Matches	-	1	1	1	1	1	1	-	1

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