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RMPA19000

Description
18-22 GHz Power Amplifier MMIC
CategoryWireless rf/communication    Radio frequency and microwave   
File Size220KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

RMPA19000 Overview

18-22 GHz Power Amplifier MMIC

RMPA19000 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
package instructionDIE OR CHIP
Reach Compliance Codecompli
Characteristic impedance50 Ω
structureCOMPONENT
Gain22 dB
Maximum input power (CW)10 dBm
Number of functions1
Maximum operating frequency22000 MHz
Minimum operating frequency18000 MHz
Maximum operating temperature85 °C
Minimum operating temperature-30 °C
Encapsulate equivalent codeDIE OR CHIP
power supply5 V
RF/Microwave Device TypesWIDE BAND MEDIUM POWER
technologyGAAS
RMPA19000
June 2004
RMPA19000
18–22 GHz Power Amplifier MMIC
General Description
The Fairchild Semiconductor RMPA19000 is a high
efficiency driver amplifier designed for use in point to point
and point to multi-point radios, and various communi-
cations applications. The RMPA19000 is a 3-stage GaAs
MMIC amplifier utilizing our advanced 0.15µm gate length
Power PHEMT process and can be used in conjunction
with other driver or power amplifiers to achieve the required
total power output.
Features
• 28dB small signal gain (typ.)
• 29dBm saturated power out (typ.)
• Circuit contains individual source Vias
• Chip Size 4.45mm x 3.50mm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
I
D
P
IN
T
C
T
STG
R
JC
Parameter
Positive DC Voltage (+5V Typical)
Negative DC Voltage
Simultaneous (Vd–Vg)
Positive DC Current
RF Input Power (from 50
source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
Ratings
+6
-2
8
1092
+10
-30 to +85
-55 to +125
16
Units
V
V
V
mA
dBm
°C
°C
°C/W
©2004 Fairchild Semiconductor Corporation
RMPA19000 Rev. C
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