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P2748_07

Description
MCT photoconductive detector
File Size80KB,4 Pages
ManufacturerHamamatsu
Websitehttp://www.hamamatsu.com
Download Datasheet Compare View All

P2748_07 Overview

MCT photoconductive detector

INFRARED DETECTOR
MCT photoconductive detector
P2748/P5274 series, P3257-50
Dewar type detector with high sensitivity and high-speed response in long wavelength range
Features
The band gap can be adjusted by controlling the composition
ratio of HgTe and CdTe. Utilizing this fact, various types are
available in different spectral characteristics.
l
Photoconductive element that decreases its resistance
by input of infrared light
l
Micro-cooled type available
This type of cooling does not require pour-filled liquid
nitrogen.
l
Custom devices available
Custom devices not listed in this catalog are also available
with different spectral response, active area sizes and
number of elements.
Glass dewar type not requiring repumping is also provided.
Applications
l
Choice of spectral response range (up to 25 µm)
l
FTIR
l
Infrared spectrophotometer
l
Thermal imaging
l
Remote sensing
l
CO
2
laser detection
Accessories (Optional)
l
Valve operator
A3515
l
Amplifiers for dewar type MCT photoconductive detector
C5185
l
Infrared detector module with preamp P7752-10
s
General rating / Absolute maximum ratings
Dimensional
outline/
Window
material *
1
➀/Z
➁/Z
➀/Z
➀/K
➂/Z
Nitrogen
maintenance
Active area
time
Cooling
Min.
(h)
(mm)
1×1
1×1
2
12
LN
0.25 × 0.25
1×1
1×1
Micro-cooled
1×1
-
Absolute maximum ratings
Allowable
Operating
Storage
current
temperature temperature
Topr
Tstg
(mA)
(°C)
(°C)
40
40
-40 to +60
-55 to +60
20
40
20
40
-40 to +55
-45 to +55
Type No.
Package
P2748-40
P2748-41
P2748-42
P5274
P5274-01
P3257-50
Side-on type metal dewar
Head-on type metal dewar
Side-on type metal dewar
Stirling type metal
s
Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
Peak
Photo
condition
Cut-off
sensitivity
sensitivity *
2
Ele m e nt wavelength wavelength
S
te m p erature
λc
λp
λ=λp
T
(°C)
(µm)
(µm)
(V/W)
1000
1000
10000
500
250
1000
D
(500, 1200, 1)
D
(λp, 1200, 1)
NEP
λ=λp
Rise
Dark
time resistance
tr
0 to 63 % Rd
(µs)
(Ω)
Type No.
Min.
Typ.
1/2
(cm· Hz /W) (cm· Hz
1/2
/W) (c m· Hz
1/2
/ W)
P2748-40
P2748-41
2 × 10
10
4.0 × 10
10
0.6
40
12
14
1 × 10
10
P2748-42
-196
P5274
14
17
2 × 10
9
1 × 10
10
1.5 × 10
10
0.6
30
9
9
10
P5274-01
17
22
1 × 10
5 × 10
1.0 × 10
0.4
100
10
10
10
P3257-50
2 × 10
4.0 × 10
0.6
40
12
14
1 × 10
*1: Window material K: KRS-5, Z: ZnSe
*2: Photo sensitivity changes with the bias current. The values in the above table are measured with the optimum bias current.
(W/Hz
1/2
)
2.5 × 10
-12
2.5 × 10
-12
6.3 × 10
-12
6.7 × 10
-12
1.0 × 10
-11
2.5 × 10
-12
1

P2748_07 Related Products

P2748_07 P2748-41 P2748-40 P2748-42 P5274 P3257-50
Description MCT photoconductive detector MCT photoconductive detector MCT photoconductive detector MCT photoconductive detector MCT photoconductive detector MCT photoconductive detector
Is it Rohs certified? - conform to conform to conform to conform to -
Maker - Hamamatsu Hamamatsu Hamamatsu Hamamatsu Hamamatsu
Reach Compliance Code - unknow unknow unknow unknow unknown
Configuration - SINGLE SINGLE SINGLE SINGLE SINGLE
Number of functions - 1 1 1 1 1
Maximum operating temperature - 60 °C 60 °C 60 °C 60 °C 55 °C
Minimum operating temperature - -40 °C -40 °C -40 °C -40 °C -40 °C
Optoelectronic device types - OPTOELECTRONIC DEVICE OPTOELECTRONIC DEVICE OPTOELECTRONIC DEVICE OPTOELECTRONIC DEVICE OPTOELECTRONIC DEVICE
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