PHOTODIODE
Si photodiode with preamp
S8745-01, S8746-01
Photodiode and preamp integrated with feedback resistance and capacitance
S8745-01, S8746-01 are low-noise sensors consisting of Si photodiode, op amp, and feedback resistance and capacitance, all integrated into a
small package. By simply connecting to a power supply, S8745-01 and S8746-01 can be used in low-light-level measurement such as analytical
equipment and measurement equipment. The active area of the photodiode is internally connected to the GND terminal making it highly resistant
to EMC noise.
Features
Applications
S8745-01: TO-5
S8746-01: TO-8
l
Active area
S8745-01: 2.4 × 2.4 mm
S8746-01: 5.8 × 5.8 mm
l
FET input operational amplifier with low power
dissipation
l
Built-in Rf=1 GΩ and Cf=5 pF
l
Variable gain with an externally connected resistor
l
Low noise and NEP
l
Package with shielding effect
l
Resistant to EMC noise
l
Si photodiode for UV to near IR precision photometry
l
Small hermetic sealed package with quartz window
l
Spectrophotometry
l
General-purpose optical measurement
S8745-01, S8746-01 may be damaged by Electro Static Discharge, etc. Please see Precautions for use in the last page.
s
Absolute maximum ratings (Ta=25
°C)
Parameter
Supply voltage (op amp)
Power dissipation
Operating temperature
Storage temperature
Symbol
Vcc
P
Topr
Tstg
Value
±20
500
-20 to +60
-30 to +80
Unit
V
mW
°C
°C
s
Electrical and optical characteristics (Typ. Ta=25
°C,
Vcc=±15 V, R
L
=1 MΩ, unless otherwise noted)
Parameter
Spectral response range
Peak sensitivity wavelength
Feedback resistance (built-in)
Feedback capacitance (built-in)
Photo sensitivity
Output noise voltage
Noise equivalent power
Output offset voltage
Cut-off frequency
Output voltage swing
Supply current
Symbol
λ
λp
Rf
Cf
S
Vn
NEP
Vos
fc
Vo
Icc
Condition
S8745-01
190 to 1100
960
1
5
0.12
0.52
6
5
11
11
±4
32
13
0.3
7
6
15
15
S8746-01
Unit
nm
nm
GΩ
pF
V/nW
µVrms/Hz
1/2
fW/Hz
1/2
mV
Hz
V
mA
λ=200
nm
λ=λp
Dark state f=10 Hz
Dark state, f=20 Hz
λ=λp,
f=10 Hz
λ=λp,
f=20 Hz
Dark state
-3 dB
Dark state
1
Si photodioe with preamp
Figure 1 Spectral response
S8745-01, S8746-01
0.6
S8745-01, S8746-01
[Typ.Ta=25 ˚C, Rf=1 G
Ω
(built-in), Cf=5 pF (built-in)]
PHOTO SENSITIVITY (V/nW)
0.5
0.4
0.3
0.2
0.1
0
190
400
600
800
1000
1200
WAVELENGTH (nm)
KSPDB0232EA
The built-in feedback resistance and capacitance of S8745-
01 and S8746-01 are 1 GΩ and 5 pF, respectively. This
combination provides a sensitivity of about 0.1 to 0.5 V/nW in
the wavelength range of 190 to 1100 nm.
Figure 2 Gain-frequency characteristics
S8745-01
10
4
[Typ. Ta=25 ˚C, Vcc=±15 V, Cf=5 pF (built-in), R
L
=1 MΩ]
S8745-01
10
3
+111 MΩ
(EXTERNAL CONNECTED)
+11 MΩ
(EXTERNAL
CONNECTED)
S8746-01
10
4
[Typ. Ta=25 ˚C, Vcc=±15 V, Cf=5 pF (built-in), R
L
=1 MΩ]
S8746-01
10
3
+111 MΩ
(EXTERNAL CONNECTED)
+11 MΩ
(EXTERNAL
CONNECTED)
CURRENT-TO-VOLTAGE CONVERSION GAIN (MΩ)
10
2
CURRENT-TO-VOLTAGE CONVERSION GAIN (MΩ)
10
2
10
1
10
1
10
0
+1 MΩ
(EXTERNAL
CONNECTED)
10
0
+1 MΩ
(EXTERNAL
CONNECTED)
10
-1
10
-1
10
-2
0.01
0.1
1
10
100
10
-2
0.01
0.1
1
10
100
FREQUENCY (kHz)
KSPDB0233EA
FREQUENCY (kHz)
KSPDB0234EA
The current-to-voltage conversion gain can be varied by connecting an external feedback resistor between pins 4 and 6
for S8745-01, and between pins 9 and 12 for S8746-01 (see figure 5). Figure 2 shows the frequency response
characteristics of S8745-01 and S8746-01 with or without an externally connected feedback resistor. Because S8745-01
and S8746-01 have a built-in resistor of 1 GΩ, for example the total feedback resistance will be converted to 100 MΩ by
externally connecting a resistor of 111 MΩ. Choose the desired constant according to the incident light level to be
detected.
Note) If the external feedback resistor is 1 M
Ω
or less, gain peaking may occur in the frequency response. Therefore, be sure to
connect a matched feedback capacitor for phase compensation.
2
Si photodioe with preamp
Figure 3 Output noise voltage vs. frequency
S8745-01
[Typ. Ta=25 ˚C, Vcc=±15 V, Cf=5 pF (built-in), R
L
=1 MΩ, dark state]
100
100
S8745-01, S8746-01
S8746-01
[Typ. Ta=25 ˚C, Vcc=±15 V, Cf=5 pF (built-in), R
L
=1 MΩ, dark state]
OUTPUT NOISE VOLTAGE (µVrms/Hz
1/2
)
OUTPUT NOISE VOLTAGE (µVrms/Hz
1/2
)
S8745-01
10
+111 MΩ
(EXTERNAL
CONNECTED)
+11 MΩ
(EXTERNAL
CONNECTED)
S8746-01
10
+111 MΩ
(EXTERNAL
CONNECTED)
1
1
0.1
+1 MΩ
(EXTERNAL
CONNECTED)
0.1
+11 MΩ
(EXTERNAL
CONNECTED)
+1 MΩ
(EXTERNAL
CONNECTED)
0.01
0.001
0.01
0.1
1
10
100
1000
0.01
0.001
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
KSPDB0235EA
FREQUENCY (kHz)
KSPDB0236EA
Output noise voltage and NEP (noise equivalent power) characteristics allow you to check whether the device can detect the low-
level light you want to measure. Since NEP is given by the equation (1) as shown at the right, NEP at wavelengths other than
λp
can
be easily calculated from Figure 1 and Figures 4.
Note) When S8745-01 and S8746-01 are used only with the internal current-to-voltage gain, it is recommended that the "-IN" lead (pin 6 for S8745-
01; pin 9 for S8746-01) be cut off to a short length in order to reduce the influence of external noise as much as possible.
NEP (f,
λ)
=
NEP (f,
λp)
· S (λp)
Vn (f)
··· (1)
=
S (λ)
G
I - V (f)
· Ssi (λ)
NEP (f,
λ)
: NEP at frequency and wavelength to be detected
NEP (f,
λp):
NEP at peak wavelength (See Figures 4)
G
I-V(f)
: Current-to-voltage conversion gain (See Figure 2)
Ssi (λ)
: Sensitivity of Si photodiode
S (λ)
: Sensitivity of S8745-01 and S8746-01 (See Figure 1.)
S (λp)
: Sensitivity of S8745-01 and S8746-01 at peak wavelength, 0.5 V/nW
Vn (f)
: Output noise voltage (See Figure 3)
Figure 4 NEP vs. frequency
S8745-01
10
6
[Typ. Ta=25 ˚C, Vcc=±15 V, Cf=5 pF (built-in), R
L
=1 MΩ, dark state,
l
=
l
p]
S8746-01
10
6
[Typ. Ta=25 ˚C, Vcc=±15 V, Cf=5 pF (built-in), R
L
=1 MΩ, dark state,
l
=
l
p]
+1 MΩ
(EXTERNAL
CONNECTED)
+11 MΩ
(EXTERNAL
CONNECTED)
+111 MΩ
(EXTERNAL
CONNECTED)
10
5
+1 MΩ
(EXTERNAL
CONNECTED)
+11 MΩ
(EXTERNAL
CONNECTED)
+111 MΩ
(EXTERNAL
CONNECTED)
10
5
NEP (fW/Hz
1/2
)
NEP (fW/Hz
1/2
)
10
4
10
4
10
3
10
3
10
2
10
2
10
1
0.001
S8745-01
0.01
0.1
1
10
100
1000
S8746-01
10
1
0.001
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
KSPDB0237EA
FREQUENCY (kHz)
KSPDB0238EA
3
Si photodioe with preamp
Figure 5 Application circuit example
S8745-01
Vcc+
S8745-01, S8746-01
Rf
(EXTERNAL CONNECTED)
0.1 µF
TO-5
PACKAGE
Rf=1 G
Ω
(BUILT-IN)
Cf=5 pF (BUILT-IN)
-
WINDOW
(QUARTZ)
PHOTODIODE
+
R
L
R
L
is the input impedance to
the next-stage circuit when
viewed from the OUT terminal.
0.1 µF
NC
Vcc-
KSPDC0048EA
S8746-01
Vcc+
Rf
(EXTERNAL CONNECTED)
0.1 µF
TO-8
PACKAGE
Rf=1 G
Ω
(BUILT-IN)
Cf=5 pF (BUILT-IN)
-
WINDOW
(QUARTZ)
PHOTODIODE
+
R
L
R
L
is the input impedance to
the next-stage circuit when
viewed from the OUT terminal.
0.1 µF
NC
Vcc-
KSPDC0049EA
S8745-01 and S8746-01 use a package with the guard ring effect provided. To make it effective during measurement, the
package leads (pin 5 for S8745-01; pins 5 and 11 for S8746-01) should be connected to the ground line.
When a feedback resistor is externally connected, it is necessary to provide a guard ring on the circuit board or to provide a teflon
standoff for the leads.
Note) A tantalum or ceramic capacitor of 0.1 to 10 µF must be connected to the supply voltage leads (pins 3 and 9 for S8745-01;
pins 1 and 4 for S8746-01) as a bypass capacitor used to prevent the device from oscillation.
4
Si photodioe with preamp
Figure 6 Dimensional outlines (unit: mm)
➀
S8745-01
9.15 ± 0.2
WINDOW
3.0 ± 0.1
6.4 ± 0.2
S8745-01, S8746-01
➁
S8746-01
15.2 ± 0.3
14.0 ± 0.2
WINDOW
10.0 ± 0.2
5.1 ± 0.2
3.45
(13.5)
8.2 ± 0.1
0.45
LEAD
0.5 MAX.
PHOTOSENSITIVE
SURFACE
4.7
PHOTOSENSITIVE
SURFACE
(20)
0.45
LEAD
NC
NC
Vcc+
OUT
CASE
-IN
NC
+IN
Vcc-
GND
5.08 ± 0.2
5.84 ± 0.2
1.2 MAX.
Vcc+
NC
NC
Vcc-
CASE
+IN
NC
NC
-IN
GND
CASE
OUT
5.08 ± 0.2
BOTTOM VIEW
10.16 ± 0.2
BOTTOM VIEW
KSPDA0158EA
KSPDA0159EA
Precautions for Use
q
ESD
S8745-01 and S8746-01 may be damaged or their performance may deteriorate by such factors as electro static discharge
from the human body, surge voltages from measurement equipment, leakage voltages from soldering irons and packing
materials. As a countermeasure against electro static discharge, the device, operator, work place and measuring jigs must
all be set at the same potential. The following precautions must be observed during use:
· To protect the device from electro static discharge which accumulate on the operator or the operator's clothes, use a wrist
strap or similar tools to ground the operator's body via a high impedance resistor (1 MΩ).
· A semiconductive sheet (1 MΩ to 100 MΩ) should be laid on both the work table and the floor in the work area.
· When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 MΩ.
· For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use
one with a resistance of 0.1 MΩ/cm
2
to 1 GΩ/cm
2.
q
Wiring
If electric current or voltage is applied in reverse polarity to an electronic device such as a preamplifier, this can degrade
device performance or destroy the device. Always check the wiring and dimensional outline to avoid misconnection.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
10.16 ± 0.2
Cat. No. KSPD1065E01
Dec. 2004 DN
5
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