IMAGE SENSOR
CCD area image sensor
S8984, S8985-02
Front-illuminated FFT-CCDs for X-ray imaging
S8984 is an FFT-CCD image sensor ideal for intra-oral X-ray imaging in dental diagnosis. S8984 has about 2 mega (1700 × 1200) pixels each of
which is 20 × 20 µm. The fiber optic plate (FOP) used as an input window is as thin as 1.5 mm but highly resistant to X-ray irradiation, making
S8984 very reliable even over a long-term operation. The scintillator coated on the FOP is optimized to have high X-ray sensitivity and high
resolution (20 Lp/mm).
S8985-02 is an easy-to-use X-ray imaging module using S8984, with added functions such as a cable assembly and X-ray trigger circuit. S8985-
02 is pin compatible with S8981-02 (number of pixels is increased). S8985-02 is advanced type of S8985 and adapted both AC and DC X-ray
sources.
Features
Applications
For use under 100,000 shots
(60 kVp, 30 mR X-ray irradiation)
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Resolution: 20 Lp/mm
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1700 (H) × 1200 (V) pixel format
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Pixel size: 20 × 20 µm
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Coupled with FOS for X-ray imaging
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100 % fill factor
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Low dark signal
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Low readout noise
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MPP operation
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AC/DC X-ray source adapted
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Sensor has X-ray monitoring photodiode
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Compactness
5.1 mm thickness excluding I/O connector part
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High dynamic range: 12 bit
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Long-term stability
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General X-ray imaging
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Non-destructive inspection
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Intra-oral X-ray imaging in dental diagnosis
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Selection guide
Type No.
S8984
S8985-02
Cooling
Non-cooled
Number of
total pixels
1708 × 1202
Number of
active pixels
1700 × 1200
Active area
[mm (H) × mm (V)]
34 × 24
s
General ratings
Parameter
CCD structure
Fill factor
Number of active pixels
Pixel size
Active area
Vertical clock phase
Horizontal clock phase
Output circuit
Dimensional outline
Reliability
Window
Other
S8984
S8985-02
Full frame transfer
100 %
1700 (H) × 1200 (V)
20 (H) × 20 (V) µm
34 (H) × 24 (V) mm
2 phase
2 phase
Emitter follower without load resistance
39.5 (H) × 27.5 (V) mm
42.6 (H) × 30.6 (V) mm
100,000 shots at 60 kVp, 30 m Roentgen
Scintillator on 1.5 mm FOP
MPP mode (low dark current operation), module (S8985-02)
1
CCD area image sensor
s
Absolute maximum ratings (Ta=25 °C)
Parameter
Storage temperature
Operating temperature
OD voltage
RD voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Vcc voltage
Symbol
Tstg
Topr
V
OD
V
RD
V
SG
V
OG
V
RG
V
TG
V
P1V
, V
P2V
V
P1H
, V
P2H
Vcc
Min.
-20
0
-0.5
-0.5
-15
-15
-15
-15
-15
-15
0
Typ.
-
-
-
-
-
-
-
-
-
-
-
S8984, S8985-02
Max.
+70
+40
+20
+18
+15
+15
+15
+15
+15
+15
+7
Unit
°C
°C
V
V
V
V
V
V
V
V
V
s
Operating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Substrate voltage
Vertical shift register
clock voltage
Horizontal shift register
clock voltage
Summing gate voltage
Reset gate voltage
Transfer gate voltage
+5 V power supply voltage
Symbol
V
OD
V
RD
V
OG
Vss
V
P1VH
, V
P2VH
V
P1VL
, V
P2VL
V
P1HH
, V
P2HH
V
P1HL
, V
P2HL
Vs
GH
Vs
GL
V
RGH
V
RGL
V
TGH
V
TGL
Vcc
Min.
12
12
-0.5
-
0
-9
0
-9
0
-9
0
-9
0
-9
4.75
Typ.
15
13
2
0
3
-8
3
-8
3
-8
3
-8
3
-8
5
Max.
-
14
5
-
6
-7
6
-7
6
-7
6
-7
6
-7
5.25
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
High
Low
High
Low
High
Low
High
Low
High
Low
s
Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Remark
Min.
Typ.
Max.
1
Signal output frequency
fc
*
-
1
5
Vertical shift register capacitance
C
P1
v, C
P2
v
-
70,000
-
S8984
-
400
-
Horizontal shift
C
P1H
, C
P2H
register capacitance
-
600
-
S8985-02
S8984
-
20
-
Summing gate capacitance
Cs
G
S8985-02
-
220
-
S8984
-
20
-
Reset gate capacitance
C
RG
S8985-02
-
220
-
S8984
-
250
-
Transfer gate capacitance
C
TG
S8985-02
-
450
-
2
Charge transfer efficiency
CTE
*
0.99995
0.99998
-
3
DC output level
V
O
ut
*
5
8
11
3
Output impedance
Zo
*
-
500
-
3 4
Power dissipation
P
* *
-
75
-
S8984
-
1
-
+5 V power supply current
Icc
S8985-02
-
2
-
*1: S8984 only. In case of S8985-02, maximum frequency is strongly depend on peripheral circuit and cable length.
*2: Measured at half of the full well capacity. CTE is defined per pixel.
*3: V
OD
=15 V
*4: Power dissipation of the on-chip amplifier.
Unit
MHz
pF
pF
pF
pF
pF
-
V
Ω
mW
mA
2
CCD area image sensor
S8984, S8985-02
Unit
ke
-
µV/e
-
e
-
/pixel/s
e
-
rms
-
%
-
Lp/mm
s
Electrical and optical characteristics (Ta=25 °C, unless otherwise noted, V
OD
=15 V)
Parameter
Symbol
Remark
Min.
Typ.
Max.
Vertical
100
200
-
Full well capacity
Horizontal
Fw
-
300
-
Summing
-
600
-
5
CCD node sensitivity
Sv
*
1.0
1.4
-
6
Dark current (MPP mode)
DS
*
-
250
2,500
7
Readout noise
Nr
*
-
60
-
8
Dynamic range
DR
*
-
3,333
-
9, 10
X-ray response non-uniformity
XRNU
* *
-
±10
±30
White spots
-
-
20
Point
defects *
12
Black spots
-
-
20
Blemish *
11
-
13
Cluster defects
*
-
-
3
14
Column defects
*
-
-
1
9
X-ray resolution
*
15
20
-
∆R
*5: V
OD
=15 V, R
L
(load resistance of emitter follower)=1 kΩ.
*6: Dark signal doubles for every 5 to 7 °C.
*7: -40 °C, operating frequency is 1 MHz.
*8: Dynamic range = Full well capacity / Readout noise
*9: X-ray irradiation of 60 kVp, measured at half of the full well capacity.
*10: XRNU (%) = Noise / Signal × 100
Noise: Fixed pattern noise (peak to peak)
In the range that excludes 5 pixels from edges to the center at every position.
*11: Refer to “Characteristics and use of FFT-CCD area image sensor” of technical information.
*12: White spots > 10 times of Max. Dark signal (2500 e
-
/pixel/s).
Black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity.
*13: continuous 2 to 9 point defects.
*14: continuous > 10 point defects.
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Device structure
1 2 3 ...... 1198 1199 1200
2
3
P1V’
P2V’
TG’
SS
OS
OD
RD
RG’
OG
SG’
P1H’
P2H’
......
D1
D2
S1
S2
S3
S4
S5
S6
......
PD
KMPDC0220EA
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Pixel format
←
Blank
2
Optical
black
2
Left
Horizontal Direction
Effective
1700
→
Right
Optical
black
0
Blank
2
Isolation
1
Isolation
1
S1699
1696
1697
S1700
1698
S1701
S1702
1699
1700
S1703
S1704
D3
VS1 VS2 VS3 VS4
D4
X-RAY IRRADIATION
MONITORING PHOTODIODE
Top
←
Vertical direction
→
Bottom
Isolation
Effective
Isolation
1
1200
1
VS1199 VS1201
VS1200 VS1202
3
CCD area image sensor
s
On-board circuit
OD
51 k
2.2 µ
S8984, S8985-02
7.5 k
10
P1V
10
P2V
10
TG
10
P1H
10
P2H
10
SG
100
RG
GND
RG’
SS
PD
Trigger A
(S8984)
SG’
P2H’
OS
Vcc
TG’
CCD CHIP
P1H’
2.2 µ
P2V’
RD
OD
P1V’
OG
0.1 µ
RD
molex 52745-1417
Vcc
Trigger A
SG
P2H
P1H
Reserve
RG
RD
OD
OUT
GND
TG
P2V
P1V
1
2
3
4
5
6
7
8
9
10
11
12
13
14
KMPDC0216EB
10 k
OUT
Trigger B
(S8985-02)
s
Timing chart
PRE-INTEGRATION PERIOD
AC X-RAY EXPOSURE (Trigger A) *
15
DC X-RAY EXPOSURE (Trigger A) *
15
Trigger B (S8985-02) *
16
P1V
VD1
INTEGRATION PERIOD
READOUT PERIOD
Tpwv
VD: VERTICAL DUMMY
1
2, 3, ... , 1199, 1200, VD2
P2V, TG *
17
P1H
P2H, SG
RG
OUT
Tovr
P2V, TG
Tpwh, Tpws
ENLARGED VIEW
P1H
P2H, SG
RG
OUT
D1
D2
S2, S3, S4, ... , S1702, S1703, S1704
S1
D3
D4
Tpwr
*15: Trigger A (S8984) is the same as AC/DC X-ray exposure form.
*16: Low active trigger pulse
*17: TG terminal can be short-circuited to P2V terminal.
KMPDC0217EA
KMPDC0217EA
Parameter
Symbol
Remark
18
Pulse width
tpwv
*
P1V, P2V, TG
Rise and fall time
tprv, tpfv
Pulse width
tpwh
P1H, P2H
Rise and fall time
tprh, tpfh
*
18
Duty ratio
Pulse width
tpws
SG
Rise and fall time
tprs, tpfs
Duty ratio
Pulse width
tpwr
RG
Rise and fall time
tprr, tpfr
TG-P1H
Overlap time
tovr
*18: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.
Min.
30
200
100
5
-
100
3
-
10
3
18
Typ.
60
-
500
-
50
500
-
50
50
-
36
Max.
-
-
-
-
-
-
-
-
-
-
-
Unit
µs
ns
ns
ns
%
ns
ns
%
ns
ns
µs
4
CCD area image sensor
s
Dimensional outlines (unit: mm)
S8984
39.5 ± 0.5
3.0
C1.0
3.6
FOP
35.5
34.0
1.0
1.9
0.55
ACTIVE AREA
S8984, S8985-02
SCINTILLATOR
→
14
molex
52745-1417
6.55
27.5 ± 0.4
1
FOP
26.4
24.0
24
CONNECTOR
0.55
26.5
FOP
CCD CHIP
ALUMINA SUBSTRATE
Cu-W (0.5 t)
3.1 ± 0.3
1.5
1.0
2.0
FOP
1.5
KMPDA0175EB
s
Pin connections (Connector on CCD package)
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Symbol
Vcc
Trigger A
SG
P2H
P1H
Reserve
RG
RD
OD
OUT
GND
TG
P2V
P1V
Description
Analog power +5 V
Trigger A output
Summing gate
CCD horizontal register clock-2
CCD horizontal register clock-1
Should be opened
Reset gate
Reset drain
Output transistor drain
Signal output
Ground
Transfer gate
CCD vertical register clock-2
CCD vertical register clock-1
Remark
5
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