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5FWJ2C48M

Description
5 A, 30 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size279KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

5FWJ2C48M Overview

5 A, 30 V, SILICON, RECTIFIER DIODE

5FWJ2C48M Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeSOD
package instruction12-10D1A, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.47 V
JESD-30 codeR-PSIP-T3
Maximum non-repetitive peak forward current55 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
5FWJ2C48M,U5FWJ2C48M
TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK
SCHOTTKY BARRIER TYPE
5FWJ2C48M, U5FWJ2C48M
SWITCHING MODE POWER SUPPLY APPLICATON
CONVERTER & CHOPPER APPLICATION
Repetitive Peak Reverse Voltage
Average Output Rectified Current
: V
RRM
= 30 V
: I
O
= 5 A
Low Switching Losses and Output Noise
Unit: mm
5FWJ2C48M
U5FWJ2C48M
JEDEC
JEITA
TOSHIBA
12-10D1A
JEDEC
JEITA
TOSHIBA
3±0.2
12-10D2A
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average
Output Rectified Current
SYMBOL
V
RRM
I
O
I
FSM
T
j
T
stg
RATING
30
5
50 (50Hz)
55 (60Hz)
−40~125
−40~150
UNIT
V
A
A
°C
°C
POLARITY
Peak One Cycle Surge Forward
Current (Sine Wave)
Junction Temperature
Storage Temperature Range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-10

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