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5GLZ47A

Description
5 A, 400 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size232KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

5GLZ47A Overview

5 A, 400 V, SILICON, RECTIFIER DIODE

5GLZ47A Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instruction3-10C3A, 2 PIN
Contacts2
Reach Compliance Codeunknow
Other featuresLOW NOISE
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.8 V
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)240
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse current50 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
5GLZ47A
TOSHIBA HIGH EFFICIENCY RECTIFIER
SILICON EPITAXIAL TYPE
5GLZ47A
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
Repetitive Peak Reverse Voltage
Ultra Fast Reverse-Recovery Time
: V
RRM
= 400 V
: t
rr
= 35 ns
Unit: mm
Low Switching Losses and Low Output Noise
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Forward Current
Peak One Cycle Surge Forward
Current (Non−Repetitive)
Junction Temperature
Storage Temperature Range
SYMBOL
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
RATING
400
5
50 (50Hz)
60 (60Hz)
150
−40~150
UNIT
V
A
A
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA
3-10C3A
Weight: 2.0 g (typ.)
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse Current
Reverse Recovery Time
Forward Recovery Time
Thermal Resistance
SYMBOL
V
FM
I
RRM
t
rr
t
fr
R
th (j−c)
I
FM
= 5A
V
RRM
= 400V
I
F
= 2A, di / dt =
−20A
/
μs
I
F
= 1A
DC
TEST CONDITION
TYP.
MIN
1.8
50
35
100
4.0
UNIT
V
μA
ns
ns
°C / W
MARKING
Abbreviation Code
5GLZ47
Part No.
5GLZ47A
5GLZ47
Part No. (or abbreviation code)
Lot No.
Characteristics
indicator
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-08

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