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5GWJ2C48C_06

Description
5 A, 40 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size308KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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5GWJ2C48C_06 Overview

5 A, 40 V, SILICON, RECTIFIER DIODE

5GWJ2C48C,U5GWJ2C48C
TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE
5GWJ2C48C, U5GWJ2C48C
SWITCHING MODE POWER SUPPLY APPLICATON
CONVERTER & CHOPPER APPLICATION
Repetitive Peak Reverse Voltage
Average Output Rectified Current
: V
RRM
= 40 V
: I
O
= 5 A
Low Switching Losses and Output Noise
Unit: mm
5GWJ2C48C
U5GWJ2C48C
JEDEC
JEITA
TOSHIBA
12-10D1A
JEDEC
JEITA
TOSHIBA
3±0.2
12-10D2A
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Surge
Voltage
(Note 1)
Average
Output Rectified Current
SYMBOL
V
RRM
V
RRSM
IO
I
FSM
T
j
T
stg
RATING
40
48
5
50 (50Hz)
55 (60Hz)
−40~125
−40~150
UNIT
V
V
A
A
°C
°C
POLARITY
Peak One Cycle Surge Forward
Current (Sin Wave)
Junction Temperature
Storage Temperature Range
Note 1: Pulse Width (t
w
)
≤500ns,
duty (t
w
/ T)
≤1
/ 25
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-10

5GWJ2C48C_06 Related Products

5GWJ2C48C_06 U5GWJ2C48C
Description 5 A, 40 V, SILICON, RECTIFIER DIODE 5 A, 40 V, SILICON, RECTIFIER DIODE

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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