RN1101_07 datasheet, PDF - EEWORLD Datasheet

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RN1101_07: DescriptionSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications; File Size559KB，8 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN1101_07 Overview

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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RN1101∼RN1106

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process)

RN1101, RN1102, RN1103,

RN1104, RN1105, RN1106

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

With built-in bias resistors

Simplified circuit design

Reduced number of parts and simplified manufacturing process

Complementary to RN2101~ RN2106

Unit: mm

Equivalent Circuit and Bias Resister Values

Type No.

RN1101

RN1102

RN1103

RN1104

RN1105

RN1106

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1101~1106

RN1101~1104

RN1105, 1106

Symbol

CBO

CEO

EBO

stg

Rating

100

150

−55~150

JEDEC

EIAJ

TOSHIBA

Weight: 2.4 mg

Unit

°C

―

2-2H1A

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

RN1101_07 Related Products

	RN1101_07	RN1101	RN1102	RN1103	RN1106	RN1105	RN1104
Description	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Is it lead-free?	-	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	-	conform to	conform to	conform to	conform to	conform to	conform to
Maker	-	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	-
package instruction	-	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	-	3	3	3	3	3	3
Reach Compliance Code	-	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	-	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 10	BUILT-IN BIAS RESISTOR RATIO IS 21.36	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	-	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-based maximum capacity	-	6 pF	6 pF	6 pF	6 pF	6 pF	6 pF
Collector-emitter maximum voltage	-	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	-	30	50	70	80	80	80
JESD-30 code	-	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	-	1	1	1	1	1	1
Number of terminals	-	3	3	3	3	3	3
Maximum operating temperature	-	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	-	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	-	0.1 W	0.1 W	0.1 W	0.1 W	0.1 W	0.1 W
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	-	YES	YES	YES	YES	YES	YES
Terminal form	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	-	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	-	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
VCEsat-Max	-	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V

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