RN49A2
TOSHIBA Transistor Silicon NPN-PNP Epitaxial Type
(PCT process) (Bias Resistor Built-in Transistor)
RN49A2
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
•
•
Two devices are incorporated into an Ultra-Super-Mini (6-pin)
package.
Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Unit: mm
Equivalent Circuit and Bias Resistor Values
Q1
C
Q2
C
B
R1
R2
B
R1
R2
JEDEC
E
E
―
―
2-2J1A
JEITA
TOSHIBA
Q1
R1: 47 kΩ, R2: 47 kΩ
Q2
R1: 2.2 kΩ, R2: 47 kΩ
Q1: RN1104F equivalent
Q2: RN2105F equivalent
Weight: 0.006g (typ.)
Marking
6
5
4
Equivalent Circuit
(top view)
6
5
4
28
Q1
Q2
1
2
3
1
2
3
1
2007-11-01
RN49A2
Absolute Maximum Ratings
(Ta = 25°C) (Q1)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
50
50
10
100
Unit
V
V
V
mA
Absolute Maximum Ratings
(Ta = 25°C) (Q2)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
−50
−50
−5
−100
Unit
V
V
V
mA
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
(Note 1)
T
j
T
stg
Rating
200
150
−55~150
Unit
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
2
2007-11-01
RN49A2
Electrical Characteristics
(Ta = 25°C) (Q1)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistance
Resistance ratio
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
R1
R1/R2
Test Condition
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
10 V, I
C
=
0
V
CE
=
5 V, I
C
=
10 mA
I
C
=
5 mA, I
B
=
0.25 mA
V
CE
=
0.2 V, I
C
=
5 mA
V
CE
=
5 V, I
C
=
0.1 mA
V
CE
=
10 V, I
C
=
5 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
⎯
⎯
Min
⎯
⎯
0.082
80
⎯
1.5
1.0
⎯
⎯
32.9
0.9
Typ.
⎯
⎯
⎯
⎯
0.1
⎯
⎯
250
3
47
1.0
Max
−100
−500
0.15
⎯
0.3
5.0
1.5
⎯
⎯
61.1
1.1
V
V
V
MHz
pF
kΩ
⎯
Unit
nA
mA
Electrical Characteristics
(Ta = 25°C) (Q2)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistance
Resistance ratio
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
R1
R1/R2
Test Condition
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −5
V, I
C
= −10
mA
I
C
= −5
mA, I
B
= −0.25
mA
V
CE
= −0.2
V, I
C
= −5
mA
V
CE
= −5
V, I
C
= −0.1
mA
V
CE
= −10
V, I
C
= −5
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
f=1MHz
⎯
⎯
Min
⎯
⎯
−0.078
80
⎯
−0.6
−0.5
⎯
⎯
1.54
Typ.
⎯
⎯
⎯
⎯
−0.1
⎯
⎯
200
3
2.2
Max
−100
−500
−0.145
⎯
−0.3
−1.1
−0.8
⎯
⎯
2.86
V
V
V
MHz
pF
kΩ
⎯
Unit
nA
mA
0.0421 0. 0468 0.0 515
3
2007-11-01
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