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30GWJ2C42C_06

Description
30 A, 40 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size513KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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30GWJ2C42C_06 Overview

30 A, 40 V, SILICON, RECTIFIER DIODE

30GWJ2C42C
TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK
SCHOTTKY BARRIER TYPE
30GWJ2C42C
SWITCHING MODE POWER SUPPLY APPLICATON
CONVERTER & CHOPPER APPLICATION
Repetitive Peak Reverse Voltage
Average Output Rectified Current
: V
RRM
= 40 V
: I
O
= 30 A
Unit: mm
Low Switching Losses and Output Noise
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Surge
Voltage
(Note 1)
Average Output Rectified Current
Peak One Cycle Surge Forward
Current (Sine Wave)
Junction Temperature
Storage Temperature Range
Screw Torque
SYMBOL
V
RRM
V
RRSM
I
O
I
FSM
T
j
T
stg
RATING
40
48
30
300 (50Hz)
330 (60Hz)
−40~125
−40~150
0.8
UNIT
V
V
A
A
°C
°C
N·m
JEDEC
JEITA
TOSHIBA
12-16D1A
Note 1: Pulse Width (t
w
)
≤500ns,
duty (t
w
/ T)
≤1
/ 25
Weight: 4.85 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Peak Forward Voltage
(Note 3)
SYMBOL
V
FM
I
RRM
C
j
R
th (j-c)
I
FM
= 15A
V
RRM
= Rated
V
R
= 10V, f = 1.0MHz
Total DC, Junction to Case
TEST CONDITION
MIN
600
TYP.
0.55
15
1.0
MAX
V
mA
pF
°C / W
Repetitive Peak Reverse Current
(Note 3)
Junction Capacitance
Thermal Resistance
(Note 3)
Note 3: A value applied to one cell.
POLARITY
1
2006-11-10

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30GWJ2C42C_06 30GWJ2C42C
Description 30 A, 40 V, SILICON, RECTIFIER DIODE 30 A, 40 V, SILICON, RECTIFIER DIODE

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