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30JL2C41

Description
30 A, 600 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size285KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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30JL2C41 Overview

30 A, 600 V, SILICON, RECTIFIER DIODE

30JL2C41 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionR-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2 V
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current165 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current30 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
30JL2C41
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED)
SILICON EPITAXIAL TYPE
30JL2C41
SWITCHING MODE POWER SUPPLY APPLICATON
CONVERTER & CHOPPER APPLICATION
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Ultra Fast Reverse-Recovery Time
: V
RRM
= 600 V
: I
O
= 30 A
: t
rr
= 50 ns (Max)
Unit: mm
Low Switching Losses and Output Noise
ABSOLUTE MAXIMUM RATINGS (
Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Peak One Cycle Surge Forward
Current (Sine Wave)
Junction Temperature
Storage Temperature Range
Screw Torque
SYMBOL
V
RRM
I
O
I
FSM
T
j
T
stg
RATING
600
30
150 (50Hz)
165 (60Hz)
−40~150
−40~150
0.8
UNIT
V
A
A
°C
°C
N·m
JEDEC
JEITA
TOSHIBA
Weight: 4.85g
12−16D1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (
Ta = 25°C)
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse Current
Reverse Recovery time
Forward Recovery time
Thermal Resistance
SYMBOL
V
FM
I
RRM
t
rr
t
fr
R
th (j−c)
I
FM
= 15A
V
RRM
= 600V
I
F
= 2A, di / dt =
−50A
/
μs
I
F
= 1A
Total DC, Junction to Case
TEST CONDITION
MIN
MAX
2.0
50
50
150
1.0
UNIT
V
μA
ns
ns
°C / W
V
FM
, I
RRM
, t
rr
, t
fr
: A value applied to one cell.
POLARITY
1
2006-11-08

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Description 30 A, 600 V, SILICON, RECTIFIER DIODE 30 A, 600 V, SILICON, RECTIFIER DIODE

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