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CMS09

Description
1 A, 30 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size155KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

CMS09 Overview

1 A, 30 V, SILICON, SIGNAL DIODE

CMS09 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionM-FLAT, 3-4E1A, 2 PIN
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.45 V
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak forward current25 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
CMS09
TOSHIBA Schottky Barrier Rectifier
Schottky Barrier Type
CMS09
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Forward voltage: V
FM
= 0.45 V (½ax)
Average forward current: I
F (AV)
= 1.0 A
Repetitive peak reverse voltage: V
RRM
= 30 V
Suitable for compact assembly due to small surface-mount package
“M−FLAT
TM
” (Toshiba package name)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
(Note 1)
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
30
1.0
(Ta
=
51°C)
25 (50 Hz)
−40~150
−40~150
Unit
V
A
A
°C
°C
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature
JEDEC
JEITA
TOSHIBA
3-4E1A
Note 1: Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm, soldering land: 6 mm
×
6 mm)
Weight: 0.023 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
V
FM (1)
Peak forward voltage
V
FM (2)
V
FM (3)
Repetitive peak reverse current
Junction capacitance
I
RRM
I
RRM
C
j
Test Condition
I
FM
=
0.1 A
I
FM
=
0.5 A
I
FM
=
1.0 A
V
RRM
=
5 V
V
RRM
=
30 V
V
R
=
10 V, f
=
1.0 MHz
Device mounted on a ceramic board
(soldering land: 2 mm
×
2 mm)
Thermal resistance
R
th (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm
×
6 mm)
Min
Typ.
0.32
0.37
0.40
1.5
15.0
70
Max
0.45
500
60
°C/W
135
16
°C/W
μA
pF
V
Unit
Thermal resistance
R
th (j-ℓ)
1
2006-11-13

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CMS09 CMS09_06
Description 1 A, 30 V, SILICON, SIGNAL DIODE 1 A, 30 V, SILICON, SIGNAL DIODE

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