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DF3A6.8LFE_07

Description
6.8 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Categorysemiconductor    Discrete semiconductor   
File Size123KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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DF3A6.8LFE_07 Overview

6.8 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

DF3A6.8LFE
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A6.8LFE
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Low terminal capacitance: C
T
= 6.0 pF (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
100
125
−55
~ 125
Unit
mW
°C
°C
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
temperature, etc.) may cause this product to decrease in the
TOSHIBA
1-2SA1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.0023 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
Z
ZK
I
R
C
T
I
Z
=
5 mA
I
Z
=
5 mA
I
Z
=
0.5 mA
V
R
=
5 V
V
R
=
0 V, f
=
1 MHz
Test Condition
Min
6.5
Typ.
6.8
6.0
Max
7.1
50
100
0.5
Unit
V
Ω
Ω
μA
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(Contact discharge)
ESD Immunity Level
±
8 kV
Criterion: No damage to device elements
1
2007-11-01

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Description 6.8 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 6.8 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
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