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DF3A8.2FE

Description
8.2 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size160KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

DF3A8.2FE Overview

8.2 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

DF3A8.2FE Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Parts packaging codeSOD
package instruction1-2SA1A, ESM, 3 PIN
Contacts3
Reach Compliance Codeunknow
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-F3
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation0.1 W
Certification statusNot Qualified
Nominal reference voltage8.2 V
surface mountYES
technologyZENER
Terminal formFLAT
Terminal locationDUAL
Maximum voltage tolerance6.1%
Working test current5 mA
DF3A8.2FE
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A8.2FE
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
*
This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
100
125
−55~125
Unit
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
temperature, etc.) may cause this product to decrease in the
JEITA
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
TOSHIBA
1-2SA1A
maximum ratings.
Weight: 0.0023 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
I
R
C
T
I
Z
=
5 mA
I
Z
=
5 mA
V
R
=
5 V
V
R
= 0 V, f = 1 MHz
Test Condition
Min
7.7
Typ.
8.2
38
Max
8.7
20
0.5
Unit
V
Ω
μA
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(Contact discharge)
ESD Immunity Level
±
30 kV
Criterion: No damage to device elements
1
2007-11-01

DF3A8.2FE Related Products

DF3A8.2FE DF5A3.3JE
Description 8.2 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 3.3 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Maker Toshiba Semiconductor Toshiba Semiconductor
Parts packaging code SOD SOD
package instruction 1-2SA1A, ESM, 3 PIN R-PDSO-F5
Contacts 3 5
Reach Compliance Code unknow unknow
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 4 ELEMENTS
Diode component materials SILICON SILICON
Diode type ZENER DIODE ZENER DIODE
JESD-30 code R-PDSO-F3 R-PDSO-F5
Number of components 2 4
Number of terminals 3 5
Maximum operating temperature 125 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
polarity UNIDIRECTIONAL UNIDIRECTIONAL
Maximum power dissipation 0.1 W 0.1 W
Certification status Not Qualified Not Qualified
Nominal reference voltage 8.2 V 3.3 V
surface mount YES YES
technology ZENER ZENER
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum voltage tolerance 6.1% 6.06%
Working test current 5 mA 5 mA
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