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DF3A8.2LFE

Description
8.2 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size132KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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DF3A8.2LFE Overview

8.2 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

DF3A8.2LFE Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Parts packaging codeSOD
package instruction1-2SA1A, 3 PIN
Contacts3
Reach Compliance Codeunknow
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-F3
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation0.1 W
Certification statusNot Qualified
Nominal reference voltage8.2 V
surface mountYES
technologyZENER
Terminal formFLAT
Terminal locationDUAL
Maximum voltage tolerance4.88%
Working test current5 mA
Base Number Matches1
DF3A8.2LFE
TOSHIBA Diodes For Protecting Against ESD
Epitaxial Planar Type
DF3A8.2LFE
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
Because two devices are mounted on an ultra compact package, it is
possible to allow reducing the number of the parts and the mounting
cost.
Low terminal capacitance: C
T
= 5.0 pF (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
100
125
−55
~ 125
Unit
mW
°C
°C
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
temperature/current/voltage and the significant change in
TOSHIBA
1-2SA1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.0023 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Total capacitance
Symbol
V
Z
Z
Z
Z
ZK
I
R
C
T
I
Z
=
5 mA
I
Z
=
5 mA
I
Z
=
0.5 mA
V
R
=
5 V
V
R
=
0 V, f
=
1 MHz
Test Condition
Min
7.8
Typ.
8.2
5.0
Max
8.6
60
100
0.5
Unit
V
Ω
Ω
μA
pF
Guaranteed Level of ESD Immunity
Marking
(top view)
Equivalent Circuit
Test Condition
IEC61000-4-2
(contact discharge)
ESD Immunity Level
±
6 kV
FU
Q1
Q2
1
2007-11-01

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Description 8.2 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 8.2 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

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