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DF5A3.3FU

Description
3.3 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size158KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

DF5A3.3FU Overview

3.3 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

DF5A3.3FU Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSOD
package instructionR-PDSO-G5
Contacts5
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationCOMMON ANODE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance130 Ω
JESD-30 codeR-PDSO-G5
Number of components4
Number of terminals5
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.2 W
Certification statusNot Qualified
Nominal reference voltage3.3 V
surface mountYES
technologyZENER
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance6.06%
Working test current5 mA
Base Number Matches1
DF5A3.3FU
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF5A3.3FU
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
*
This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
200
125
−55~125
Unit
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
temperature, etc.) may cause this product to decrease in the
JEITA
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
TOSHIBA
1-2V1B
maximum ratings.
Weight: 0.0062g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
1.CATHODE 1
2. ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
Electrical Characteristics
(Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
I
R
C
T
I
Z
= 5 mA
I
Z
= 5 mA
V
R
= 1 V
V
R
=
0 V, f
=
1 MHz
Test Condition
Min
3.1
Typ.
3.3
115
Max
3.5
130
20
Unit
V
μA
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(Contact discharge)
ESD Immunity Level
±
30 kV
Criterion: No damage to device elements
1
2007-11-01

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