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ZXMC6A09DN8

Description
3.9 A, 60 V, 0.045 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size282KB,10 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

ZXMC6A09DN8 Overview

3.9 A, 60 V, 0.045 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET

ZXMC6A09DN8 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)5 A
Maximum drain-source on-resistance0.07 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
ZXMC6A09DN8
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V
(BR)DSS
= 60V; R
DS(ON)
= 0.045 ; I
D
= 5.1A
P-Channel V
(BR)DSS
= -60V; R
DS(ON)
= 0.055 ; I
D
= -4.8A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
SO8
APPLICATIONS
Motor drive
LCD backlighting
Q1 = N-CHANNEL
Q2 = P-CHANNEL
ORDERING INFORMATION
DEVICE
ZXMC6A09DN8TA
ZXMC6A09DN8TC
REEL
7
’‘
13’‘
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
500 units
2500 units
PINOUT
DEVICE MARKING
ZXMC
6A09
Top view
ISSUE 3 - AUGUST 2004
1

ZXMC6A09DN8 Related Products

ZXMC6A09DN8 ZXMC6A09DN8TC
Description 3.9 A, 60 V, 0.045 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 3.9 A, 60 V, 0.045 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
Is it Rohs certified? conform to conform to
Maker Zetex Semiconductors Zetex Semiconductors
package instruction SMALL OUTLINE, R-PDSO-G8 SO-8
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Minimum drain-source breakdown voltage 60 V 60 V
Maximum drain current (ID) 5 A 5.1 A
Maximum drain-source on-resistance 0.07 Ω 0.045 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G8 R-PDSO-G8
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 2 2
Number of terminals 8 8
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL AND P-CHANNEL N-CHANNEL AND P-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface MATTE TIN Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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