GT15M321
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR
SILICON N CHANNEL IGBT
GT15M321
HIGH POWER SWITCHING APPLICATIONS
Fourth-generation IGBT
FRD included between emitter and collector
Enhancement mode type
High speed
Low saturation voltage
: t
f
= 0.20
μs
(TYP.) (I
C
= 15 A)
: V
CE (sat)
= 1.8V (TYP.)
(I
C
= 15A)
Unit: mm
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
CHARACTERISTIC
Collector−Emitter Voltage
Gate-Emitter Voltage
Collector Current
Emitter−Collector Foward
Current
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
DC
1ms
DC
1ms
SYMBOL
V
CES
V
GES
I
C
I
CP
I
F
I
FM
P
C
T
j
T
stg
RATING
900
±25
15
30
15
120
55
150
−55~150
UNIT
V
V
A
A
JEDEC
W
°C
°C
⎯
⎯
2-16F1A
JEITA
TOSHIBA
Weight: 5.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
EQUIVALENT CIRCUIT
MARKING
TOSHIBA
GT15M321
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-10-31
GT15M321
ELECTRICAL CHARACTERISTICS
(Ta=25°C)
CHARACTERISTIC
Gate Leakage Current
Collector Cut−off Current
Gate-Emitter Cut−off Voltage
Collector−Emitter Saturation Voltage
Input Capacitance
Rise Time
Turn−on Time
Switching Time
Fall Time
Turn−off Time
Emitter-Collector Forward Voltage
Reverse Recovery Time
Thermal Resistance
Thermal Resistance
SYMBOL
I
GES
I
CES
V
GE (OFF)
V
CE (sat)
C
ies
t
r
t
on
t
f
t
off
V
F
t
rr
R
th (j−c)
R
th (j−c)
I
EC
= 15 A, V
GE
= 0
I
F
= 15 A, V
GE
= 0
di / dt =
−20
A /
μs
IGBT
Diode
TEST CONDITION
V
GE
= ±25 V, V
CE
= 0
V
CE
= 900 V, V
GE
= 0
I
C
= 15 mA, V
CE
= 5 V
I
C
= 15 A, V
GE
= 15 V
V
CE
= 10 V, V
GE
= 0, f = 1 MHz
MIN
―
―
3.0
―
―
―
―
―
―
―
―
―
―
TYP.
―
―
―
1.8
1200
0.20
0.30
0.20
0.50
1.5
0.7
―
―
MAX
±500
1.0
6.0
2.5
―
―
―
0.40
―
2.0
2.5
2.27
2.27
V
μs
°C / W
°C / W
μs
UNIT
nA
mA
V
V
pF
2
2006-10-31
京公网安备 11010802033920号
EEWORLD
