GT15Q301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR
SILICON N CHANNEL IGBT
GT15Q301
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
Third-generation IGBT
Enhancement mode type
High speed
Low saturation voltage
: t
f
= 0.32
μs
(Max.)
: V
CE (sat)
= 2.7 V (Max.)
Unit: mm
FRD included between emitter and collector
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current
Emitter−Collector Forward
Current
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
DC
1ms
DC
1ms
SYMBOL
V
CES
V
GES
I
C
I
CP
I
F
I
FM
P
C
Tj
T
stg
RATING
1200
±20
15
30
15
30
170
150
−55~150
UNIT
V
V
A
A
A
A
W
JEDEC
JEITA
TOSHIBA
Weight: 4.6 g (typ.)
⎯
⎯
2-16C1C
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
EQUIVALENT CIRCUIT
MARKING
TOSHIBA
GT15Q301
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-01
GT15Q301
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Gate Leakage Current
Collector Cut−Off Current
Gate-Emitter Cut−Off Voltage
Collector−Emitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
Turn−On Time
Fall Time
Turn−Off Time
Peak Forward Voltage
Reverse Recovery Time
Thermal Resistance (IGBT)
Thermal Resistance (Diode)
SYMBOL
I
GES
I
CES
V
GE (OFF)
V
CE (sat)
C
ies
t
r
t
on
t
f
t
off
V
F
t
rr
R
th (j−c)
R
th (j−c)
I
F
= 15 A, V
GE
= 0
I
F
= 15 A, di / dt =
−200
A /
μs
―
―
TEST CONDITION
V
GE
= ±20 V, V
CE
= 0
V
CE
= 1200 V, V
GE
= 0
I
C
= 1.5 mA, V
CE
= 5 V
I
C
= 15 A, V
GE
= 15 V
V
CE
= 50 V, V
GE
= 0, f = 1 MHz
Inductive Load
V
CC
= 600 V, I
C
= 15 A
V
GG
= ±15 V, R
G
= 56
Ω
(Note)
MIN
―
―
4.0
―
―
―
―
―
―
―
―
―
―
TYP.
―
―
―
2.1
950
0.05
0.12
0.16
0.56
―
―
―
―
MAX
±500
1.0
7.0
2.7
―
―
―
0.40
―
3.0
350
0.74
1.56
V
ns
°C / W
°C / W
μs
UNIT
nA
mA
V
V
pF
Note :
Switching time measurement circuit and input / output waveforms
2
2006-11-01
Embedded System
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