TLP206G
TOSHIBA Photocoupler
GaAs Ired & Photo−MOS FET
TLP206G
PBX
Modem½FAX Card
Measurement Instrument
Unit in mm
The TOSHIBA TLP206G consists of gallium arsenide infrared emitting
diode optically coupled to a photo−MOS FET in a 8 pin SOP.
The TLP206G is a 2−Form−A switch which is suitable for replacement of
mechanical relays in many application.
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SOP 8 pin (2.54SOP8): 2−Form−A
Peak off−state voltage: 350V(min)
Trigger LED current: 3mA(max)
On−state current: 120mA(max)
On−state resistance: 35Ω(max)
Isolation voltage: 1500V
rms
(min)
UL recognized: UL1577, file no.E67349
BSI approved: BS EN60065: 2002, certificate no.8753
BS EN60950-1: 2002, certificate no.8754
SEMKO approved: SS EN60065
SS EN60950
Option(V4)type
TUV approved: DIN EN 60747-5-2,
certificate No. 40009351
JEDEC
EIAJ
TOSHIBA
Weight: 0.2 g
―
―
Schematic
2-Form-A
1, 3
6, 8
8
7
6
5
Pin Configuration
(top view)
1
8
2
7
1
2, 4
5, 7
2
3
4
3
6
4
1, 3: Anode
2, 4: Cathpde
5: Drain D1
6: Drain D2
7: Drain D3
8: Drain D4
5
1
2007-10-01
TLP206G
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Forward current derating (Ta
≥
25°C)
LED
Pulse forward current (100μs pulse, 100pps)
Reverse voltage
Junction temperature
Off−state output terminal voltage
Detector
On−state current
On−state RMS current
derating(Ta
≥
25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 1 min., R.H.≤ 60%)
(Note 2)
Both channel
One channel
Both channel
One channel
(Note 1)
(Note 1)
Symbol
I
F
ΔI
F
/ °C
I
FP
V
R
T
j
V
OFF
I
ON
Rating
50
−0.5
1
5
125
350
100
120
−1.0
−1.2
125
−55~125
−40~85
260
1500
Unit
mA
mA / °C
A
V
°C
V
mA
ΔI
ON
/ °C
T
j
T
stg
T
opr
T
sol
BV
S
mA / °C
°C
°C
°C
°C
V
rms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1): Two channels operating simultaneously.
(Note 2): Device considered a two−terminal device: Pins1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted
together.
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
On−state current
Operating temperature
Symbol
V
DD
I
F
I
ON
T
opr
Min.
―
5
―
−20
Typ.
―
7.5
―
―
Max.
280
25
100
65
Unit
V
mA
mA
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01
TLP206G
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance
Detector
Off−state current
Capacitance
Symbol
V
F
I
R
C
T
I
OFF
C
OFF
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0, f = 1 MHz
V
OFF
= 350 V
V = 0,f = 1MHZ
Min.
1.0
—
—
—
—
Typ.
1.15
—
30
—
40
Max.
1.3
10
—
1
—
Unit
V
μA
pF
μA
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Trigger LED current
On−state resistance
Symbol
I
FT
R
ON
Test Condition
I
ON
= 120 mA
I
ON
= 120 mA, I
F
= 5 mA
MIn.
—
—
Typ.
1
22
Max.
3
35
Unit
mA
Ω
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0, f = 1 MHz
V
S
= 500 V, R.H.
≤
60%
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
Min.
—
5×10
10
Typ.
0.8
10
14
Max.
—
—
—
—
—
Unit
pF
Ω
V
rms
V
dc
1500
—
—
—
3000
3000
Switching Characteristics
(Ta = 25°C)
Characteristic
Turn−on time
Turn−off time
Symbol
t
ON
t
OFF
Test Condition
R
L
= 200Ω
V
DD
= 20 V, I
F
= 5 mA
(Note 3)
Min.
—
—
Typ.
0.3
0.1
Max.
1
1
Unit
ms
(Note 3): Switching time test circuit
I
F
1, 3
6, 8
R
L
V
DD
V
OUT
90%
10%
t
OFF
I
F
2, 4
5, 7
V
OUT
t
ON
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2007-10-01
TLP206G
I
F
– Ta
100
140
I
ON
– Ta
Allowable MOSFET on-state current
ION(RMS) (mA)
120
100
80
60
40
20
0
－20
Allowable forward current
IF (mA)
80
60
40
20
0
－20
0
20
40
60
80
100
120
0
20
40
60
80
100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
FP
– D
R
5000
3000
Pulse width
≤
100μs
Ta = 25°C
1000
500
300
100
50
30
Ta = 25°C
I
F
–V
F
Allowable pulse forward current
IFP (mA)
(mA)
10
Forward current IF
－
3
5
3
100
50
30
1
0.5
0.3
0.1
0.6
10
3
10
3
10
－
2
3
10
－
1
3
10
0
0.8
1.0
1.2
1.4
1.6
1.8
Duty cycle ratio
DR
Forward voltage VF
(V)
ΔV
F
/
ΔTa
– I
F
1000
－2.8
500
300
I
FP
– V
FP
－2.4
Pulse forward current IFP (mA)
Forward voltage temperature
coefficient
ΔV
F /
ΔTa
(mV / °C)
100
50
30
－2.0
－1.6
－1.2
10
5
3
0
0.6
Pulse width
≤
10μs
Repetitive frequency = 100Hz
Ta = 25°C
－0.8
－0.4
0.1
0.3 0.5
1
3
5
10
30
50
1.0
1.4
1.8
2.2
2.6
3.0
Forward current IF
(mA)
Pulse forward voltage
VFP (V)
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2007-10-01
TLP206G
I
FT
– Ta
5
ION = 120mA
150
Ta = 25°C
IF = 5mA
100
I
ON
– V
ON
(mA)
MOSFET on-state current ION
Relative trigger LED current
IFT / IFT (Ta = 25°C)
4
50
3
0
2
－50
1
－100
0
－40
－20
0
20
40
60
80
100
－150
－2.5
－1.5
－0.5
0.5
1.5
2.5
Ambient temperature Ta (°C)
MOSFET on-state voltage
VON (V)
R
ON
– Ta
40
1000
I
OFF
– Ta
(mA)
VOFF = 350V
500
300
100
(Ω)
ION = 120mA
IF = 5mA
30
MOSFET on-state resistance RON
MOSFET off-state current
ION
50
30
10
5
3
1
－20
20
10
0
－40
－20
0
20
40
60
80
100
0
20
40
60
80
100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
t
ON
– Ta
1000
VDD = 20V
RL = 200Ω
800
400
t
OFF
– Ta
VDD = 20V
RL = 200Ω
IF = 5½A
300
(ms)
600
Turn-off time tOFF
－20
0
20
40
60
80
100
Turn-on time tON
(ms)
IF = 5½A
200
400
200
100
0
－40
0
－40
－20
0
20
40
60
80
100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
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2007-10-01
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