TLP250
TOSHIBA Photocoupler
GaAℓAs Ired & Photo−IC
TLP250
Transistor Inverter
Inverter For Air Conditioner
IGBT Gate Drive
Power MOS FET Gate Drive
The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a
integrated photodetector.
This unit is 8
−
lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.
•
•
•
•
•
•
•
•
Input threshold current: I
F
=5mA(max.)
Supply current (I
CC
): 11mA(max.)
Supply voltage (V
CC
): 10
−
35V
Output current (I
O
): ±1.5A (max.)
Switching time (t
pLH
/t
pHL
): 0.5μs(max.)
Isolation voltage: 2500V
rms
(min.)
UL recognized: UL1577, file No.E67349
Option(D4)
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 890V
PK
Highest Permissible Over Voltage
Please designate “Option(D4)”
1
2
8
7
6
5
Unit in mm
TOSHIBA
11−10C4
Weight: 0.54 g(Typ.)
: 4000V
PK
(Note):When a EN60747-5-2 approved type is needed,
Pin Configuration (top view)
Truth Table
Tr1
Input
LED
On
Off
On
Off
Tr2
Off
On
3
4
1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
5 : GND
6 : V
O
(Output)
7 : V
O
8 : V
CC
Schmatic
I
F
2+
V
F
3-
I
CC
V
CC
8
(T
r
1)
7
I
O
(T
r
2)
6
V
O
V
O
GND
A 0.1μF bypass capcitor must be
connected between pin 8 and 5 (See Note 5).
5
1
2007-10-01
TLP250
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Forward current derating (Ta
≥
70°C)
LED
Peak transient forward curent
Reverse voltage
Junction temperature
“H”peak output current (P
W
≤
2.5μs,f
≤
15kHz)
“L”peak output current (P
W
≤
2.5μs,f
≤
15kHz)
Output voltage
Detector
Supply voltage
Output voltage derating (Ta
≥
70°C)
Supply voltage derating (Ta
≥
70°C)
Junction temperature
Operating frequency
Operating temperature range
Storage temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 1 min., R.H.≤ 60%)
(Note 4)
(Note 3)
(Note 2)
(Note 2)
(Ta
≤
70°C)
(Ta
=
85°C)
(Ta
≤
70°C)
(Ta
=
85°C)
(Note 1)
Symbol
I
F
ΔI
F
/
ΔTa
I
FPT
V
R
Tj
I
OPH
I
OPL
V
O
V
CC
ΔV
O
/
ΔTa
ΔV
CC
/
ΔTa
Tj
f
T
opr
T
stg
T
sol
BV
S
Rating
20
−0.36
1
5
125
−1.5
+1.5
35
24
35
24
−0.73
−0.73
125
25
−20~85
−55~125
260
2500
Unit
mA
mA / °C
A
V
°C
A
A
V
V
V / °C
V / °C
°C
kHz
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Pulse width P
W
≤
1μs, 300pps
Exporenential wavefom
Exporenential wavefom, I
OPH
≤
−1.0A(
≤
2.5μs), I
OPL
≤
+1.0A(
≤
2.5μs)
Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted
together.
A ceramic capacitor(0.1μF) should be connected from pin 8 to pin 5 to stabilize the operation of the high
gain linear amplifier. Failure to provide the bypassing may impair the switching proparty. The total lead
length between capacitor and coupler should not exceed 1cm.
Recommended Operating Conditions
Characteristic
Input current, on
Input voltage, off
Supply voltage
Peak output current
Operating temperature
(Note6)
Symbol
I
F(ON)
V
F(OFF)
V
CC
I
OPH
/I
OPL
T
opr
Min
7
0
15
―
−20
Typ.
8
Max
10
0.8
30
±0.5
70
85
20
Unit
mA
V
V
A
°C
―
―
―
25
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Note 6: Input signal rise time(fall time)<0.5μs.
2
2007-10-01
TLP250
Electrical Characteristics
(Ta =
−20~70°C,
unless otherwise specified)
Characteristic
Input forward voltage
Temperature coefficient of
forward voltage
Input reverse current
Input capacitance
“H” level
Output current
“L” level
“H” level
Output voltage
“L” level
V
OL
4
I
OPL
V
OH
2
3
Symbol
V
F
ΔV
F
/
ΔTa
I
R
C
T
I
OPH
Test
Cir−
cuit
―
―
―
―
1
Test Condition
I
F
=
10 mA , Ta = 25°C
I
F
=
10 mA
V
R
= 5V, Ta = 25°C
V = 0 , f = 1MHz , Ta = 25°C
V
CC
= 30V
(*1)
I
F
=
10 mA
V
8−6
=
4V
I
F
=
0
V
6−5
=
2.5V
Min
―
―
―
―
−0.5
0.5
11
―
―
―
⎯
―
―
0.8
10
V
S
= 0 , f = 1MHz
Ta = 25℃
V
S
= 500V , Ta = 25°C
R.H.≤ 60%
―
1×10
12
Typ.*
1.6
−2.0
―
45
−1.5
2
12.8
−14.2
7
―
7.5
―
1.2
―
―
1.0
10
14
Max
1.8
―
10
250
―
Unit
V
mV / °C
μA
pF
A
―
―
V
−12.5
―
11
⎯
11
5
―
35
2.0
―
mA
V
V
pF
Ω
mA
V
CC1
= +15V, V
EE1
=
−15V
R
L
= 200Ω, I
F
= 5mA
V
CC1
= +15V, V
EE1
=
−15V
R
L
= 200Ω, V
F
= 0.8V
V
CC
= 30V, I
F
= 10mA
Ta = 25°C
V
CC
= 30V, I
F
= 10mA
“H” level
Supply current
“L” level
Threshold input
current
Threshold input
voltage
Supply voltage
Capacitance
(input−output)
Resistance(input−output)
“Output
L→H”
“Output
H→L”
I
CCH
―
I
CCL
―
V
CC
= 30V, I
F
= 0mA
Ta = 25°C
V
CC
= 30V, I
F
= 0mA
I
FLH
―
―
―
―
―
V
CC1
= +15V, V
EE1
=
−15V
R
L
= 200Ω, V
O
> 0V
V
CC1
= +15V, V
EE1
=
−15V
R
L
= 200Ω, V
O
< 0V
V
FHL
V
CC
C
S
R
S
* All typical values are at Ta = 25°C
(*1): Duration of I
O
time
≤
50μs
3
2007-10-01
Embedded System
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EEWORLD
