TLP629,TLP629−2,TLP629−4
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP629,TLP629−2,TLP629−4
Telecommunication
Office Machine
Telephone Use Equipment
The TOSHIBA TLP629,
−2,
and
−4
consists of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode.
The TLP629−2 offers two isolated channels in an eight lead plastic DIP,
while the TLP629−4 provides four isolated channels in a sixteen plastic
DIP. This is suitable for application of DC input current up to 150mA.
•
•
•
•
•
•
I
F
maximum rating: 150mA
Collector−emitter voltage: 55V (min.)
Current transfer ratio: 25% (min.) (I
F
=20mA)
Isolation voltage: 5000V
rms
(min.)
UL recognized: UL1577, file no. E67349
BSI approved: BS EN60065:2002, certificate no.7426
BS EN60950-1:2002, certificate no.7427
TOSHIBA
Weight: 0.26 g
11−5B2
Unit in mm
Pin Configurations
(top view)
TOSHIBA
Weight: 0.54 g
11−10C4
TOSHIBA
Weight: 1.1 g
11−20A3
1
2007-10-01
TLP629,TLP629−2,TLP629−4
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Forward current derating
LED
Pulse forward current
Reverse voltage
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Detector
Collector current
Collector power dissipation
(1 circuit)
Collector power dissipation derating
(1 circuit, Ta
≥
25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation derating
(Ta≥25°C)
Isolation voltage
(Note 1)
Symbol
I
F
ΔI
F
/ °C
I
FP
V
R
T
j
V
CEO
V
ECO
I
C
P
C
ΔP
C
/ °C
T
j
T
stg
T
opr
T
sol
P
T
ΔP
T
/ °C
BV
S
250
−2.5
150
−1.5
125
−55~125
−55~100
260 (10s)
200
2.0
Rating
TLP629
150
−1.5
(Ta
≥
25°C)
1 (100μs pulse, 100pps)
5
125
55
7
80
100
−1.0
TLP629−2,4
Unit
mA
mA / °C
A
V
°C
V
V
mA
mW
mW / °C
°C
°C
°C
°C
mW
mW / °C
V
rms
5000 (AC, 1min., RH
≤
60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together.
Recommended Operating Conditions
Characteristics
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
V
CC
I
F
I
C
T
opr
Min.
―
―
―
−25
Typ.
5
20
1
―
Max.
24
120
10
85
Unit
V
mA
mA
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01
TLP629,TLP629−2,TLP629−4
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Forward current
Reverse current
Capacitance
Collector−emitter
breakdown voltage
Detector
Emitter−collector
breakdown voltage
Collector dark current
Capacitance collector to emitter
Symbol
V
F
I
F
I
R
C
T
V
(BR) CEO
V
(BR) ECO
I
CEO
C
CE
Test Condition
I
F
= 100 mA
V
F
= 0.7 V
V
R
= 5 V
V = 0, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 24 V
V
CE
= 24 V, Ta = 85°C
V = 0, f = 1 MHz
Min.
—
—
—
—
55
7
—
—
—
Typ.
1.4
2.5
—
50
—
—
10
2
10
Max.
1.7
20
10
—
—
—
100
50
—
Unit
V
μA
μA
pF
V
V
nA
μA
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
I
C
/ I
F
Current transfer ratio
I
C
/ I
F
(high)
V
CE (sat)
I
C(off)
Test Condition
I
F
= 20 mA, V
CE
= 1 V
I
F
= 100 mA, V
CE
= 1 V
I
C
= 2.4 mA, I
F
= 20 mA
I
C
= 2.4 mA, I
F
= 100 mA
V
F
= 0.7V, V
CEO
= 24 V
MIn.
25
20
—
—
—
Typ.
—
—
—
—
1
Max.
—
80
0.4
0.4
1.0
%
Unit
Collector−emitter saturation voltage
Off−state collector current
V
μA
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0, f = 1 MHz
V
S
= 500 V
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
Min.
—
5×10
10
Typ.
0.8
10
14
Max.
—
—
—
—
—
Unit
pF
Ω
V
rms
Vdc
5000
—
—
—
10000
10000
3
2007-10-01
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