2DA1213O/Y
50V PNP POWER SWITCHING TRANSISTOR IN SOT89
Features
BV
CEO
> -50V
I
C
= -2A high Continuous Collector Current
High Gain Holds up
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT89
Case material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.052 grams (Approximate)
SOT89
C
E
B
C
C
B
E
Top View
Device Symbol
Top View
Pin Out
Ordering Information
(Notes 4)
Product
2DA1213O-13
2DA1213Y-13
2DA1213Y-13R
Notes:
Marking
P25X
P25Y
P25Y
Reel size (inches)
13
13
13
Tape width (mm)
12
12
12
Quantity per reel
2,500
2,500
4,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html
Marking Information
YWW
xxxx
xxxx = Product Type Marking Code:
P25X = 2DA1213O
P25Y = 2DA1213Y
YWW = Date Code Marking
Y = Last digit of year (ex: 1 = 2011)
WW = Week code 01 - 53
2DA1213O/Y
Document number: DS31306 Rev: 5 - 2
1 of 6
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February 2013
© Diodes Incorporated
2DA1213O/Y
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
-50
-50
-6
-2
-2.5
-500
Unit
V
V
V
A
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
1
125
18.3
-55 to +150
Unit
W
C/W
C/W
C
5. For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is
measured when operating in steady state condition.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
Thermal Characteristics and Derating Information
Max Power Dissipation (W)
Thermal Resistance (°C/W)
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
120
100
80
60
40
20
0
100µ
1m
10m 100m
1
D=0.2
D=0.1
Single Pulse
D=0.05
D=0.5
10
100
1k
Temperature (°C)
Pulse Width (s)
Derating Curve
100
Transient Thermal Impedance
Max Power Dissipation (W)
Single Pulse. T
amb
=25°C
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
2DA1213O/Y
Document number: DS31306 Rev: 5 - 2
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February 2013
© Diodes Incorporated
2DA1213O/Y
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
2DA1213O
DC Current Gain (Note 8)
2DA1213Y
2DA1213O, 2DA1213Y
Collector-Emitter Saturation Voltage (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
Transition Frequency
Output Capacitance
Turn-On Time
Storage Time
Fall Time
Note:
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
obo
t
on
t
(s)
t
(f)
Min
-50
-50
-6
—
—
70
120
20
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
160
17
25
130
12
Max
—
—
—
-100
-100
140
240
—
-0.5
-1.2
—
—
—
—
—
Unit
V
V
V
nA
nA
—
V
V
MHz
pF
ns
ns
ns
Test Condition
I
C
= -100µA
I
C
= -10mA
I
E
= -100µA
V
CB
= -50V
V
EB
= -5V
I
C
= -500mA, V
CE
= -2V
I
C
= -500mA, V
CE
= -2V
I
C
= -2A, V
CE
= -2V
I
C
= -1A, I
B
= -50mA
I
C
= -1A, I
B
= -50mA
I
C
= -100mA, V
CE
= -2V,
f = 100MHz
V
CB
= -10V, I
E
= 0, f = 1MHz
V
CE
= -2V, I
C
= -1A,
I
B1
= -I
B2
= -50mA
7. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%.
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1.0
I
B
= -10mA
200
T
A
= 150°C
V
CE
= -2V
-I
C
, COLLECTOR CURRENT (A)
0.8
h
FE
, DC CURRENT GAIN
I
B
= -8mA
150
T
A
= 85°C
0.6
I
B
= -6mA
100
T
A
= 25°C
0.4
I
B
= -4mA
0.2
50
T
A
= -55°C
I
B
= -2mA
1
2
3
4
5
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 1 Typical Collector Current vs. Collector-Emitter Voltage
0
0
0
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Figure 2 Typical DC Current Gain vs. Collector Current
(2DA1213O)
2DA1213O/Y
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2DA1213O/Y
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1
1.2
V
CE
= -2V
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 20
1
0.8
T
A
= -55°C
0.1
T
A
= 85°C
0.6
T
A
= 25°C
T
A
= 150°C
0.4
T
A
= -55°C
T
A
= 85°C
T
A
= 150°C
T
A
= 25°C
0.2
0
0.0001
0.01
0.0001
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Figure 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
I
C
/I
B
= 20
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Figure 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.2
C
obo
, OUTPUT CAPACITANCE (pF)
1.0
60
f = 1MHz
45
0.8
T
A
= -55°C
0.6
T
A
= 25°C
30
0.4
T
A
= 85°C
T
A
= 150°C
15
0.2
0
0.0001
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Figure 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0
0.01
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Figure 6 Typical Output Capacitance Characteristics
f
T
, CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
200
150
100
50
V
CE
= -6V
f = 100MHz
20 30 40 50 60 70 80 90 100
-I
C
, COLLECTOR CURRENT (mA)
Figure 7 Typical Gain-Bandwidth Product vs. Collector Current
0
0
10
2DA1213O/Y
Document number: DS31306 Rev: 5 - 2
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February 2013
© Diodes Incorporated
2DA1213O/Y
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D1
00
0.2
R
1
C
H
E
H
B1
B
e
8° (4X)
L
A
SOT89
Dim
Min
Max
A
1.40
1.60
B
0.44
0.62
B1
0.35
0.54
C
0.35
0.44
D
4.40
4.60
D1
1.62
1.83
E
2.29
2.60
e
1.50 Typ
H
3.94
4.25
H1
2.63
2.93
L
0.89
1.20
All Dimensions in mm
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
X2 (2x)
Y3
Y
Y2
C
X (3x)
Y1
Y4
Dimensions Value (in mm)
X
0.900
X1
1.733
X2
0.416
Y
1.300
Y1
4.600
Y2
1.475
Y3
0.950
Y4
1.125
C
1.500
2DA1213O/Y
Document number: DS31306 Rev: 5 - 2
5 of 6
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February 2013
© Diodes Incorporated
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