Precision Monolithic Quad SPST CMOS Analog Switches
DESCRIPTION
The DG417B, DG418B, DG419B monolithic CMOS analog
switches were designed to provide high performance
switching of analog signals. Combining low power, low
leakages, high speed, low on-resistance and small physical
size, the DG417B series is ideally suited for portable and
battery powered industrial and military applications requiring
high performance and efficient use of board space.
To achieve high-voltage ratings and superior switching
performance, the DG417B series is built on Vishay
Siliconix’s high voltage silicon gate (HVSG) process. Break-
before-make is guaranteed for the DG419B, which is an
SPDT configuration. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
The DG417B and DG418B respond to opposite control logic
levels as shown in the Truth Table.
FEATURES
•
•
•
•
•
•
± 15 V analog signal range
On-resistance - R
DS(on)
: 15
Ω
Fast switching action - t
ON
: 110 ns
TTL and CMOS compatible
MSOP-8 and SOIC-8 package
Compliant to RoHS directive 2002/95/EC
BENEFITS
•
•
•
•
•
•
Widest dynamic range
Low signal errors and distortion
Break-before-make switching action
Simple interfacing
Reduced board space
Improved reliability
APPLICATIONS
•
•
•
•
•
•
•
Precision test equipment
Precision instrumentation
Battery powered systems
Sample-and-hold circuits
Military radios
Guidance and control systems
Hard disk drivers
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG417B
Dual-In-Line, SOIC-8 and MSOP-8
S
No
connect
GND
V+
1
2
3
4
Top
View
8
7
6
5
D
V-
IN
V
L
TRUTH TABLE
Logic
0
1
Logic "0"
≤
0.8 V
Logic "1"
≥
2.4 V
DG417B
ON
OFF
DG418B
OFF
ON
DG419B
Dual-In-Line, SOIC-8 and MSOP-8
D
S
1
GND
V+
1
2
3
4
Top
View
8
7
6
5
S
2
V-
IN
V
L
TRUTH TABLE - DG419B
Logic
0
1
Logic "0"
≤
0.8 V
Logic "1"
≥
2.4 V
SW
1
ON
OFF
SW
2
OFF
ON
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 72107
S09-1261-Rev. D, 13-Jul-09
www.vishay.com
1
DG417B, DG418B, DG419B
Vishay Siliconix
ORDERING INFORMATION
Temp Range
DG417B, DG418B
Package
Part Number
DG417BDJ
DG417BDJ-E3
DG418BDJ
DG418BDJ-E3
DG417BDY
DG417BDY-E3
DG417BDY-T1
DG417BDY-T1-E3
DG418BDY
DG418BDY-E3
DG418BDY-T1
DG418BDY-T1-E3
DG417BDQ-T1-E3
DG418BDQ-T1-E3
DG419BDJ
DG419BDJ-E3
DG419BDY
DG419BDY-E3
DG419BDY-T1
DG419BDY-T1-E3
DG419BDQ-T1-E3
8-Pin Plastic MiniDIP
- 40 °C to 85 °C
8-Pin Narrow SOIC
8-Pin MSOP
DG419B
8-Pin Plastic MiniDIP
- 40 °C to 85 °C
8-Pin Narrow SOIC
8-Pin MSOP
ABSOLUTE MAXIMUM RATINGS
Parameter
V-
V+
GND
V
L
Digital Inputs
a
, V
S
, V
D
Current, (Any Terminal) Continuous
Current (S or D) Pulsed at 1 ms, 10 % Duty Cycle
Storage Temperature
8-Pin Plastic MiniDIP
Power Dissipation (Package)
b
8-Pin Narrow SOIC
8-Pin MSOP
d
8-Pin CerDIP
e
c
c
Limit
- 20
20
25
(GND - 0.3) to (V+) + 0.3
(V-) - 2 V to (V+) + 2
or 30 mA, whichever occurs first
30
100
- 65 to 150
400
400
400
600
Unit
V
mA
°C
mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 5.3 mW/°C above 75 °C.
d. Derate 4 mW/°C above 70 °C.
e. Derate 8 mW/°C above 75 °C.
www.vishay.com
2
Document Number: 72107
S09-1261-Rev. D, 13-Jul-09
DG417B, DG418B, DG419B
Vishay Siliconix
SCHEMATIC DIAGRAM
Typical Channel
V+
S
V
L
V
-
V
IN
Level
Shift/
Drive
V+
GND
D
V
-
Figure 1.
SPECIFICATIONS
a
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.
b
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Full
Full
R
L
= 300
Ω,
C
L
= 35 pF
V
S
=
±
10 V, See Switching
Time Test Circuit
DG417B
DG418B
DG417B
DG418B
Room
Full
Room
Full
Room
Full
Room
Room
Room
Room
Typ.
c
Min.
d
- 15
15
Max.
d
15
25
34
0.25
20
0.25
20
0.75
60
0.4
40
0.75
60
0.5
0.5
89
106
80
88
87
96
3
3
pC
Min.
d
- 15
Max.
d
15
25
29
0.25
5
0.25
5
0.75
12
0.4
10
0.75
12
0.5
0.5
89
99
80
86
87
93
Unit
V
Ω
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Symbol
V
ANALOG
R
DS(on)
I
S(off)
I
S
= - 10 mA, V
D
=
±
12.5 V
V+ = 13.5 V, V- = - 13.5 V
-
0.1
-
0.1
-
0.1
-
0.4
-
0.4
Switch Off Leakage Current
I
D(off)
V+ = 16.5, V- = - 16.5 V
DG417B
V
D
=
±
15.5 V, V
S
=
±
15.5 V DG418B
DG419B
DG417B
DG418B
DG419B
Channel On Leakage Current
Digital Control
Input Current, V
IN
Low
Input Current, V
IN
High
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Transition Time
Break-Before-Make
Time Delay
Charge Injection
Off Isolation
e
Channel-to-Channel
Crosstalk
e
I
D(on)
V+ = 16.5 V, V- = - 16.5 V
V
S
= V
D
=
±
15.5 V
- 0.25
- 20
- 0.25
- 20
- 0.75
- 60
- 0.4
- 40
- 0.75
- 60
- 0.5
- 0.5
- 0.25
-5
- 0.25
-5
- 0.75
- 12
- 0.4
- 10
- 0.75
- 12
- 0.5
- 0.5
nA
I
IL
I
IH
t
ON
t
OFF
t
TRANS
t
D
Q
OIRR
X
TALK
µA
62
53
60
16
38
- 82
R
L
= 300
Ω,
C
L
= 35 pF
DG419B
V
S1
=
±
10 V, V
S2
=
±
10 V
R
L
= 300
Ω,
C
L
= 35 pF
DG419B
V
S1
= V
S2
=
±
10 V
C
L
= 10 nF
V
gen
= 0 V, R
gen
= 0
Ω
R
L
= 50
Ω,
C
L
= 5 pF,
f = 1 MHz
DG419B
ns
dB
- 88
Document Number: 72107
S09-1261-Rev. D, 13-Jul-09
www.vishay.com
3
DG417B, DG418B, DG419B
Vishay Siliconix
SPECIFICATIONS
a
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.
b
Room
f = 1 MHz, V
S
= 0 V
DG417B
DG418B
DG417B
DG418B
DG419B
Room
Room
Room
Room
Full
Room
Full
Room
Full
Room
Full
Typ.
c
12
12
pF
50
57
0.001
- 0.001
0.001
- 0.001
-1
-5
-1
-5
1
5
-1
-5
1
5
-1
-5
1
5
1
5
µA
Min.
d
Max.
d
Min.
d
Max
d.
Unit
Parameter
Dynamic Characteristics
Source Off Capacitance
e
Drain Off Capacitance
e
Channel On Capacitance
e
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
Symbol
C
S(off)
C
D(off)
C
D(on)
f = 1 MHz, V
S
= 0 V
I+
I-
I
L
I
GND
V+ = 16.5 V, V- = - 16.5 V
V
IN
= 0 or 5 V
SPECIFICATIONS
a
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.
b
Full
Room
Full
Room
Full
Room
Full
DG419B Room
Room
Full
Room
Room
Full
V+ = 13.2 V, V
L
= 5.25 V
V
IN
= 0 or 5 V
Room
Room
Room
Typ.
c
Min.
d
0
26
Max.
d
12
35
52
125
155
66
73
25
119
153
25
119
141
pC
1
5
-1
-5
1
5
-1
-5
-1
-5
-1
-5
1
5
1
5
µA
Min.
d
0
Max.
d
12
35
45
125
143
66
69
Unit
V
Ω
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Transition Time
Charge Injection
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
Symbol
V
ANALOG
R
DS(on)
I
S
= - 10 mA, V
D
=
3.8
V
V+ = 10.8 V
R
L
= 300
Ω,
C
L
= 35 pF
V
S
=
8
V, See Switching
Time Test Circuit
R
L
= 300
Ω,
C
L
= 35 pF
t
ON
t
OFF
t
D
t
TRANS
Q
100
38
62
95
18
ns
R
L
= 300
Ω,
C
L
= 35 pF
V
S1
= 0 V, 8 V, V
S2
=
8
V, 0 V
C
L
= 10 nF, V
gen
= 0 V, R
gen
= 0
Ω
I+
I-
I
L
I
GND
0.001
- 0.001
0.001
- 0.001
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Embedded System
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