技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
IHM-A模块
IHM-Amodule
初步数据/PreliminaryData
FD800R33KF2C-K
V
CES
= 3300V
I
C nom
= 800A / I
CRM
= 1600A
典型应用
•
斩波应用
•
牵引变流器
TypicalApplications
• ChopperApplications
• TractionDrives
机械特性
•
碳化硅铝（AlSiC）基板提供更高的温度循环½力
MechanicalFeatures
•
AlSiC Base Plate for increased Thermal Cycling
Capability
ModuleLabelCode
BarcodeCode128
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
dateofpublication:2013-11-25
revision:2.3
1
ULapproved(E83335)
Digit
1-5
6-11
12-19
20-21
22-23
DMX-Code
preparedby:SB
approvedby:DTS
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FD800R33KF2C-K
初步数据
PreliminaryData
3300
3300
800
1300
1600
9,60
+/-20
min.
I
C
= 800 A, V
GE
= 15 V
I
C
= 800 A, V
GE
= 15 V
I
C
= 80,0 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V, V
CE
= 1800V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 3300 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 800 A, V
CE
= 1800 V
V
GE
= ±15 V
R
Gon
= 1,4
Ω,
C
GE
= 150 nF
I
C
= 800 A, V
CE
= 1800 V
V
GE
= ±15 V
R
Gon
= 1,4
Ω,
C
GE
= 150 nF
I
C
= 800 A, V
CE
= 1800 V
V
GE
= ±15 V
R
Goff
= 1,8
Ω,
C
GE
= 150 nF
I
C
= 800 A, V
CE
= 1800 V
V
GE
= ±15 V
R
Goff
= 1,8
Ω,
C
GE
= 150 nF
I
C
= 800 A, V
CE
= 1800 V, L
S
= 40 nH
V
GE
= ±15 V
R
Gon
= 1,4
Ω,
C
GE
= 150 nF
I
C
= 800 A, V
CE
= 1800 V, L
S
= 40 nH
V
GE
= ±15 V
R
Goff
= 1,8
Ω,
C
GE
= 150 nF
V
GE
≤
15 V, V
CC
= 2500 V
V
CEmax
= V
CES
-L
sCE
·di/dt
每个IGBT/perIGBT
每个IGBT/perIGBT
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
t
d on
4,2
typ.
3,40
4,30
5,1
15,0
0,63
100
5,40
0,28
0,28
0,18
0,20
1,55
1,70
0,20
0,20
930
1450
870
1000
max.
4,25
5,00
6,0
5,0
400
V
V
V
µC
Ω
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
IGBT,制动-斩波器/IGBT,Brake-Chopper
最大额定值/MaximumRatedValues
集电极－发射极电压
Collector-emittervoltage
连续集电极直流电流
ContinuousDCcollectorcurrent
集电极重复峰值电流
Repetitivepeakcollectorcurrent
总功率损耗
Totalpowerdissipation
栅极－发射极峰值电压
Gate-emitterpeakvoltage
T
vj
= 25°C
T
vj
= -25°C
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 150°C
V
CES
V
A
A
I
C nom
I
C
I
CRM
P
tot
V
GES
A
kW
V
特征值/CharacteristicValues
集电极－发射极饱和电压
Collector-emittersaturationvoltage
栅极阈值电压
Gatethresholdvoltage
栅极电荷
Gatecharge
内部栅极电阻
Internalgateresistor
输入电容
Inputcapacitance
反向传输电容
Reversetransfercapacitance
集电极-发射极截止电流
Collector-emittercut-offcurrent
栅极-发射极漏电流
Gate-emitterleakagecurrent
开通延迟时间(电感负½½)
Turn-ondelaytime,inductiveload
上升时间(电感负½½)
Risetime,inductiveload
关断延迟时间(电感负½½)
Turn-offdelaytime,inductiveload
下降时间(电感负½½)
Falltime,inductiveload
开通损耗½量(每脉冲)
Turn-onenergylossperpulse
关断损耗½量(每脉冲）
Turn-offenergylossperpulse
短路数据
SCdata
结－外壳热阻
Thermalresistance,junctiontocase
外壳－散热器热阻
Thermalresistance,casetoheatsink
在开关状态下温度
Temperatureunderswitchingconditions
t
r
t
d off
t
f
E
on
E
off
I
SC
R
thJC
R
thCH
T
vj op
-40
t
P
≤
10 µs, T
vj
= 125°C
4000
8,00
A
13,0 K/kW
K/kW
125
°C
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.3
2
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FD800R33KF2C-K
初步数据
PreliminaryData
3300
3300
800
1600
220
1600
10,0
min.
I
F
= 800 A, V
GE
= 0 V
I
F
= 800 A, V
GE
= 0 V
T
vj
= 25°C
T
vj
= 125°C
V
F
I
RM
typ.
2,80
2,80
1100
1300
500
900
490
1150
16,0
125
max.
3,50
3,50
V
V
A
A
µC
µC
mJ
mJ
二极管，制动-斩波器/Diode,Brake-Chopper
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
I2t-值
I²t-value
最大损耗功率
Maximumpowerdissipation
最小开通时间
Minimumturn-ontime
T
vj
= 25°C
T
vj
= -25°C
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
T
vj
= 125°C
V
RRM
I
F
I
FRM
I²t
V
A
A
kA²s
kW
µs
P
RQM
t
on min
特征值/CharacteristicValues
正向电压
Forwardvoltage
反向恢复峰值电流
Peakreverserecoverycurrent
恢复电荷
Recoveredcharge
反向恢复损耗（每脉冲）
Reverserecoveryenergy
结－外壳热阻
Thermalresistance,junctiontocase
外壳－散热器热阻
Thermalresistance,casetoheatsink
在开关状态下温度
Temperatureunderswitchingconditions
I
F
= 800 A, - di
F
/dt = 4500 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 1800 V
T
vj
= 125°C
V
GE
= -15 V
I
F
= 800 A, - di
F
/dt = 4500 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 1800 V
T
vj
= 125°C
V
GE
= -15 V
I
F
= 800 A, - di
F
/dt = 4500 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 1800 V
T
vj
= 125°C
V
GE
= -15 V
每个二极管/perdiode
每个二极管/perdiode
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
Q
r
E
rec
R
thJC
R
thCH
T
vj op
-40
26,0 K/kW
K/kW
°C
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.3
3
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FD800R33KF2C-K
初步数据
PreliminaryData
T
vj
= 25°C
T
vj
= -25°C
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
T
vj
= 125°C
3300
3300
800
1600
220
1600
10,0
min.
I
F
= 800 A, V
GE
= 0 V
I
F
= 800 A, V
GE
= 0 V
T
vj
= 25°C
T
vj
= 125°C
V
F
I
RM
typ.
2,80
2,80
1100
1300
500
900
490
1150
16,0
125
max.
3,50
3,50
V
V
A
A
µC
µC
mJ
mJ
反向二极管/Diode,Reverse
反向重复峰值电压
Repetitivepeakreversevoltage
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
I2t-值
I²t-value
最大损耗功率
Maximumpowerdissipation
最小开通时间
Minimumturn-ontime
最大额定值/MaximumRatedValues
V
RRM
I
F
I
FRM
I²t
V
A
A
kA²s
kW
µs
P
RQM
t
on min
特征值/CharacteristicValues
正向电压
Forwardvoltage
反向恢复峰值电流
Peakreverserecoverycurrent
恢复电荷
Recoveredcharge
反向恢复损耗（每脉冲）
Reverserecoveryenergy
结－外壳热阻
Thermalresistance,junctiontocase
外壳－散热器热阻
Thermalresistance,casetoheatsink
在开关状态下温度
Temperatureunderswitchingconditions
I
F
= 800 A, - di
F
/dt = 4500 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 1800 V
T
vj
= 125°C
I
F
= 800 A, - di
F
/dt = 4500 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 1800 V
T
vj
= 125°C
I
F
= 800 A, - di
F
/dt = 4500 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 1800 V
T
vj
= 125°C
每个二极管/perdiode
每个二极管/perdiode
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
Q
r
E
rec
R
thJC
R
thCH
T
vj op
-40
26,0 K/kW
K/kW
°C
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.3
4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FD800R33KF2C-K
初步数据
PreliminaryData
RMS, f = 50 Hz, t = 1 min.
RMS, f = 50 Hz, Q
PD
≤
10 pC (acc. to IEC 1287)
T
vj
= 25°C, 100 fit
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
V
ISOL
V
ISOL
V
CE D
CTI
min.
6,0
2,6
1800
AlSiC
AlN
32,2
32,2
19,1
19,1
> 400
typ.
12
0,19
0,34
-
-
-
1500
max.
125
5,75
2,1
10
nH
mΩ
°C
Nm
Nm
Nm
g
kV
kV
V
模块/Module
绝缘测试电压
Isolationtestvoltage
局部放电停止电压
Partialdischargeextinctionvoltage
DC稳定性
DCstability
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
爬电距离
Creepagedistance
电气间隙
Clearance
相对电痕指数
Comperativetrackingindex
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
端子联接扭距
Terminalconnectiontorque
mm
mm
T
C
=25°C,每个开关/perswitch
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
螺丝M4根据相应的应用手册进行安装
ScrewM4-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote
L
sCE
R
CC'+EE'
R
AA'+CC'
T
stg
M
-40
4,25
1,8
M
8,0
G
重量
Weight
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.3
5
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