Supertex inc.
N-Channel Enhancement-Mode
Vertical DMOS FET
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TN0104
Features
Low threshold (1.6V max.)
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
General Description
This low threshold, enhancement-mode (normally-off) transistor
utilizes a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination produces a
device with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
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Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Device
TN0104
Package Options
TO-92
TN0104N3-G
TO-243AA (SOT-89)
TN0104N8-G
NW
(Die in wafer form)
Wafer / Die Options
NJ
(Die on adhesive tape)
ND
(Die in waffle pack)
TN1504NW
TN1504NJ
TN1504ND
For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF15 for layout and dimensions.
Product Summary
Device
TN0104N3-G
TN0104N8-G
BV
DSS
/BV
DGS
(V)
Pin Configurations
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
V
GS(th)
(max)
(V)
DRAIN
40
40
1.8
2.0
2.0
2.0
1.6
1.6
DRAIN
SOURCE
GATE
SOURCE
DRAIN
GATE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
TO-92 (N3)
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
TO-243AA (SOT-89) (N8)
Product Marking
SiTN
01 04
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
TN1LW
Package may or may not include the following marks: Si or
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
W = Code for Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89) (N8)
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
TN0104
Thermal Characteristics
Package
TO-92
TO-243AA (SOT-89)
(continuous)
(mA)
I
D
†
(pulsed)
(A)
I
D
Power Dissipation
@T
C
= 25
O
C
(W)
O
( C/W)
θ
jc
( C/W)
O
θ
ja
(mA)
I
DR
†
I
DRM
(A)
450
630
2.40
2.90
1.0
1.6
‡
125
15
170
78
‡
450
630
2.40
2.90
Notes:
† I
D
(continuous) is limited by max rated T
j
.
‡ T
A
= 25°C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(T
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
Parameter
A
= 25
O
C unless otherwise specified)
Min
40
0.6
-
-
-
Typ
-
-
-3.8
0.1
-
-
0.35
1.1
2.6
5.0
2.3
1.5
-
0.7
450
-
-
-
3.0
7.0
6.0
5.0
1.2
-
300
Max
-
1.6
-5.0
100
1.0
100
-
-
-
-
2.5
1.8
2.0
1.0
-
70
50
15
5.0
8.0
9.0
8.0
1.8
2.0
-
Units
V
V
nA
µA
Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 500µA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125°C
V
GS
= 3.0V, V
DS
= 20V
V
GS
= 5.0V, V
DS
= 20V
V
GS
= 10V, V
DS
= 20V
V
GS
= 3.0V, I
D
= 50mA
V
GS
= 5.0V, I
D
= 250mA
V
GS
= 10V, I
D
= 1.0A
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage
Zero gate voltage drain current
mV/
O
C V
GS
= V
DS
, I
D
= 1.0mA
-
-
I
D(ON)
On-state drain current
0.5
2.0
Both packages
TO-92
TO-243AA
-
-
-
-
-
340
-
-
-
-
-
-
-
TO-92
TO-243AA
-
-
-
A
R
DS(ON)
Static drain-to-source
on-state resistance
Ω
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage
drop
Reverse recovery time
%/
O
C
V
GS
= 10V, I
D
= 1.0A
mmho V
DS
= 20V, I
D
= 500mA
pF
V
GS
= 0V,
V
DS
= 20V,
f = 1.0MHz
V
DD
= 20V,
I
D
= 1.0A,
R
GEN
= 25Ω
V
ns
V
GS
= 0V, I
SD
= 1.0A
V
GS
= 0V, I
SD
= 0.5A
V
GS
= 0V, I
SD
= 1.0A
ns
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
2
Tel: 408-222-8888
www.supertex.com
TN0104
Typical Performance Curves
3.75
Output Characteristics
3.75
Saturation Characteristics
3.00
3.00
V
GS
= 10V
I
D
(amperes)
8V
1.50
I
D
(amperes)
2.25
2.25
V
GS
= 10V
8V
1.50
6V
6V
0.75
0.75
4V
4V
2V
0
0
2V
10
20
30
40
0
0
2
4
6
8
10
V
DS
(volts)
V
DS
(volts)
0.75
Transconductance vs. Drain Current
V
DS
= 25V
5
Power Dissipation vs. Case Temperature
(T
A
= 25
O
C)
0.60
T
A
= -55
O
C
4
G
FS
(siemens)
0.30
T
A
= 125
O
C
P
D
(watts)
0.45
T
A
= 25
O
C
3
2
TO-243AA
0.15
1
TO-92
0
0
0.5
1.0
1.5
2.0
2.5
0
0
25
50
75
100
125
150
I
D
(amperes)
T
C
( C)
O
10
Maximum Rated Safe Operating Area
1.0
Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
I
D
(amperes)
0.0
TO-92 (DC)
TO-243AA (DC)
0.6
TO-243AA
P
D
= 1.6W
T
A
= 25
O
C
0.4
0.1
0.2
0.01
0.1
(T
A
= 25
O
C)
1.0
10
100
TO-92
P
D
= 1.0W
T
C
= 25
O
C
0.01
0.1
1.0
10
0
0.001
V
DS
(volts)
t
P
(seconds)
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
4
Tel: 408-222-8888
www.supertex.com
TN0104
Typical Performance Curves
(cont.)
1.3
BV
DSS
Variation with Temperature
10
On-Resistance vs. Drain Current
V
GS
= 5.0V
1.2
8
BV
DSS
(normalized)
R
DS(ON)
( )
1.1
6
1.0
4
V
GS
= 10V
0.9
2
0.8
-50
0
50
100
150
0
0
1
2
T
j
( C)
O
I
D
(amperes)
3.0
Transfer Characteristics
V
DS
= 25V
T
A
= -55
O
C
25
O
C
1.4
V
(th)
and R
DS
Variation with Temperature
1.4
2.4
1.2
1.2
V
GS(th)
(normalized)
1.8
1.0
125 C
O
R
DS(ON)
@ 5.0V, 0.25A
1.0
1.2
0.8
V
(th)
@ 0.5mA
0.8
0.6
0.6
0.6
0
0
2
4
6
8
10
0.4
-50
0
50
100
0.4
150
V
GS
(volts)
T
j
(
O
C)
100
Capacitance vs. Drain-to-Source Voltage
f = 1MHz
10
Gate Drive Dynamic Characteristics
V
DS
= 10V
8
75
55pF
40V
C (picofarads)
50
C
ISS
V
GS
(volts)
6
4
25
2
C
OSS
0
C
RSS
0
10
20
30
40
0
0.50
50pF
0.65
0.80
0.95
1.10
1.25
V
DS
(volts)
Q
G
(nanocoulombs)
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
5
Tel: 408-222-8888
www.supertex.com
R
DS(ON)
(normalized)
I
D
(amperes)
Wireless Connectivity
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