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BD434/436/438
BD434/436/438
Medium Power Linear and Switching
Applications
• Complement to BD433, BD435 and BD437 respectively
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BD434
: BD436
: BD438
V
CES
Collector-Emitter Voltage
: BD434
: BD436
: BD438
Collector-Emitter Voltage
: BD434
: BD436
: BD438
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
- 22
- 32
- 45
- 22
- 32
- 45
- 22
- 32
- 45
-5
-4
-7
-1
36
150
- 65 ~ 150
V
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Parameter
Value
Units
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
BD434/436/438
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: BD434
: BD436
: BD438
Collector Cut-off Current
: BD434
: BD436
: BD438
I
CEO
Collector Cut-off Current
: BD434
: BD436
: BD438
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
: BD434/436
: BD438
: ALL DEVICE
: BD434/436
: BD438
V
CE
(sat)
* Collector-Emitter Saturation Voltage
: BD434
: BD436
: BD438
* Base-Emitter ON Voltage
: BD434
: BD436
: BD438
Current Gain Bandwidth Product
V
CE
= - 5V, I
C
= - 10mA
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 1V, I
C
= - 2A
40
30
85
50
40
140
140
140
V
CE
= - 22V, V
BE
= 0
V
CE
= - 32V, V
BE
= 0
V
CE
= - 45V, V
BE
= 0
V
EB
= - 5V, I
C
= 0
- 100
- 100
- 100
-1
µA
µA
µA
mA
Test Condition
I
C
= - 100mA, I
B
= 0
Min.
- 22
- 32
- 45
- 100
- 100
- 100
Typ.
Max.
Units
V
V
V
µA
µA
µA
I
CBO
V
CB
= - 22V, I
E
= 0
V
CB
= - 32V, I
E
= 0
V
CB
= - 45V, I
E
= 0
I
C
= - 2A, I
B
= - 0.2A
- 0.2
- 0.2
- 0.2
- 0.5
- 0.5
- 0.6
- 1.1
- 1.1
- 1.2
V
V
V
V
V
V
MHz
V
BE
(on)
V
CE
= - 1V, I
C
= - 2A
f
T
V
CE
= - 1V, I
C
= - 250mA
3
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
BD434/436/438
Typical Characteristics
1000
-1
100
V
CE
(sat)[V], SATURATION VOLTAGE
V
CE
= -1V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
-0.1
10
1
-0.01
-0.1
-1
-10
-100
-0.01
-0.1
-1
-10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
-5.0
-4.5
-1000
V
CE
= -1V
I
C
[A], COLLECTOR CURRENT
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
-0.0
-0.0
C
CBO
(pF), COLLECTOR BASE CAPACITANCE
-100
-10
-0.3
-0.5
-0.8
-1.0
-1.3
-1.5
-1.8
-2.0
-1
-0.1
-1
-10
-100
-1000
V
BE
[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Collector-Base Capacitance
-10
I
C
MAX. (Pulsed)
10 1m
ms s
10
µ
s
48
42
100
µ
s
I
C
[A], COLLECTOR CURRENT
I
C
Max. (Continuous)
DC
P
C
[W], POWER DISSIPATION
-100
36
30
-1
24
18
12
-0.1
-1
BD434
BD436
BD438
-10
6
0
0
25
50
o
75
100
125
150
175
200
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Embedded System
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