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TZX12D-TR

Description
Zener Diodes 12.45 Volt 0.5W
CategoryDiscrete semiconductor    diode   
File Size103KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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TZX12D-TR Overview

Zener Diodes 12.45 Volt 0.5W

TZX12D-TR Parametric

Parameter NameAttribute value
MakerVishay
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance35 Ω
JEDEC-95 codeDO-35
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
GuidelineAEC-Q101
Nominal reference voltage12 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance2.01%
Working test current5 mA
TZX-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
• Low noise
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Voltage stabilization
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.4 to 36
2; 5
Pulse current
Single
UNIT
V
mA
ORDERING INFORMATION
DEVICE NAME
TZX-series
TZX-series
ORDERING CODE
TZX-series-TAP
TZX-series-TR
TAPED UNITS PER REEL
10 000 per ammopack
(52 mm tape)
10 000 per 14" reel
(52 mm tape)
MINIMUM ORDER QUANTITY
30 000/box
30 000/box
PACKAGE
PACKAGE NAME
DO-35
WEIGHT
125 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Zener current
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Forward voltage (max.)
I
F
= 200 mA
l = 4 mm, T
L
=constant
TEST CONDITION
l = 4 mm, T
L
= 25 °C
SYMBOL
P
tot
I
Z
R
thJA
T
j
T
stg
V
F
VALUE
500
P
tot
/V
Z
300
175
- 65 to + 175
1.5
UNIT
mW
mA
K/W
°C
°C
V
Rev. 2.4, 14-Apr-14
Document Number: 85614
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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