®
BUL903ED
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
s
s
s
INTEGRATED ANTISATURATION AND
PROTECTION NETWORK
INTEGRATED ANTIPARALLEL COLLECTOR
EMITTER DIODE
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
ARCING TEST SELF PROTECTED
TO-220
3
1
2
APPLICATIONS
s
LAMP ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING USING 277V
HALF BRIDGE CURRENT-FED
CONFIGURATION
DESCRIPTION
The BUL903ED is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
The device has been designed to operate without
baker clamp and transil protection. This enables
saving from 2 up to 10 components in the
application.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (t
p
<5 ms)
Base Current
Base Peak Current (t
p
<5 ms)
Total Dissipation at Tc = 25
o
C
Storage Temperature
Max. Operating Junction Temperature
Value
900
400
7
5
8
2
4
70
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
o
C
C
February 2001
1/6
BUL903ED
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
1.8
62.5
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CES
I
EBO
Parameter
Collector Cut-off
Current (V
BE
= 0)
Base-Emitter Leakage
Current
Test Conditions
V
CE
= 900 V
V
EB
= 7 V
I
C
= 10 mA
L = 25 mH
400
Min.
Typ.
Max.
1
100
Unit
mA
µA
V
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
∗
V
BE(sat)
∗
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
Parallel Diode Forward
Voltage
RESISTIVE LOAD
Delay Time
Rise Time
Storage Time
Fall Time
RESISTIVE LOAD
Delay Time
Rise Time
Storage Time
Fall Time
Diode Reverse
Recovery Time
Avalanche Energy
I
C
= 1 A
I
C
= 0.1 A
I
C
= 0.5 A
I
C
= 2.0 A
I
C
= 5 mA
I
C
= 0.5 A
I
F
= 3 A
V
CC
= 125 V
I
B1
= 0.05 A
t
p
= 300
µs
I
B
= 0.15 A
I
B
= 0.05 A
I
B
= 0.1 A
I
B
= 0.4 A
V
CE
= 10 V
V
CE
= 3 V
8
20
1.0
1.0
1.1
1.2
V
V
V
V
h
FE
∗
V
F
1.2
I
C
= 0.7 A
I
B2
= 0.4 A
V
t
d
t
r
t
s
t
f
t
d
t
r
t
s
t
f
T
RR
E
sb
0.2
1.0
0.8
0.25
0.2
0.5
0.8
0.5
300
6
µs
µs
µs
µs
µs
µs
µs
µs
ns
mJ
V
CC
= 125 V
I
B1
= 0.045 A
t
p
= 300
µs
I
C
= 0.5 A
I
B2
= 0.5 A
I
F
= 1 A
V
DD
= 30 V
L = 2 mH
di/dt = 100 A/µs
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
2/6
stm32/stm8
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