BCX41QTA datasheet, PDF - EEWORLD Datasheet

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BCX41QTA: DescriptionBipolar Transistors - BJT General Purpose Transistor; CategoryDiscrete semiconductor The transistor; File Size35KB，1 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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BCX41QTA Overview

Bipolar Transistors - BJT General Purpose Transistor

BCX41QTA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	13 weeks
Other features	HIGH RELIABILITY
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	125 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Guideline	AEC-Q101
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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SOT23 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 OCTOBER 1995

BCX41

PARTMARKING DETAIL EK

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

SYMBOL

CES

CEO

EBO

TOT

stg

VALUE

125

800

100

330

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

100

0.9

1.4

100

Collector-Base Cut-Off I

CES

Current

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

CEX

EBO

CE(sat)

BE(sat)

=100V

=100V, T

amb

=150°C

=100V,V

=0.2V,T

amb

=85°C

=100V,V

=0.2V,

amb

=125°C

=4V

=300mA, I

=30mA *

=300mA, I

=30mA *

=10

0µ

A, V

=1V

=100mA, V

=1V *

=200mA, V

=1V *

Static Forward

Current Transfer Ratio

Transition Frequency

Output Capacitance

obo

MHz I

=10mA, V

=5V

f =20MHz

=10V, I

=0, f =1MHz

* Measured under pulsed conditions. Pulse width = 300

s. Duty cycle 2%

3 - 33

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