THYRISTOR MODULE
SBA500AA
UL;E76102 M）
（
Power Thyristor Module
SBA500AA
series are designed for high power rectifier control
applications. Two independent thyristor elements in a electrically isolated package enable
you to achieve flexible design, especially for AC switch application, idial terminal
location for bus bar connection helps both your mechanical design and mounting
procedure be more efficient. SBA series for two thyristors with blocking voltage up to
1600V are available.
Isolated mounting base
●
I
T AV）
500A, I
T RMS）
785A
（
（
●
di/dt 200 A/μs
●
dv/dt 500V/μs
（Applications）
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
Internal Configurations
A1 K2
138max
60±0.2
60±0.2
K1
A2
4
2
5
7
K1
6-
φ6.5
78max
60±0.2
13.5
13.5
3
1
6
8
K2
G1
A1
28±1
60±1
K2
28±1
4-M4 depth8㎜
4-M8 depth15㎜
K1 A2
47±1
K1
G1
G2
K2
66max
Unit：A
■Maximum
Ratings
Symbol
V
DRM
V
RSM
V
RRM
Symbol
（
I
T AV）
（
I
T RMS）
Item
Repetitive Peak Off-State Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Item
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
（Forward）
Peak Gate Voltage
（Reverse）
Critical Rate of Rise of On-State Current
Isolation Breakdown Voltage（R.M.S.）
Operating Junction Temperature
Storage Temperature
Mounting（M6）
Mounting
Torque
Terminal（M8）
Terminal（M4）
Mass
SBA500AA40
400
480
400
Ratings
SBA500AA80
SBA500AA120
800
1200
960
1350
800
1200
31
8
48±1
SBA500AA160
1600
1700
1600
Ratings
500
785
9.1/10.0
416
15
5
5
10
5
Unit
V
V
V
Unit
A
A
kA
kA
2
S
W
W
A
V
V
A/
μs
V
℃
℃
N½½
(㎏f½B)
N½½
(㎏f½B)
N½½
(㎏f½B)
g
Unit
mA
mA
V
mA
V
V
V/
μs
℃/W
Conditions
Single phase, half wave, 180°
conduction, Tc：66℃
Single phase, half wave, 180°
conduction, Tc：66℃
1
cycle,
／
2
I
TSM
I
2
t
P
GM
（AV）
P
G
50Hz/60Hz, peak Value, non-reqetitive
Value for one cycle of surge current
I
FGM
V
FGM
V
RGM
di/dt
V
ISO
Tj
Tstg
I
G
＝200mA，
D
＝
1 2
V
DRM
，
G
/dt＝0.2A/
V
／
dI
μs
A.C. 1 minute
200
2500
−40 to ＋125
−40 to ＋125
Recommended Value 2.5-3.9
(Recommended Value 25-40)
Recommended Value 8.8-10
(Recommended Value 90-105)
Recommended Value 1.0-1.4
Recommended Value 10-14)
Typical Value
4.7
(48)
11.0
(115)
1.5
(15)
1100
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
V
GT
V
GD
dv/dt
Item
Repetitive Peak Off-State Current, max.
Repetitive Peak Reverse Current, max.
Peak On-State Voltage, max.
Gate Trigger Current, max.
Gate Trigger Voltage, max.
Non-Trigger Gate, Voltage. min.
Critical Rate of Rise of Off-State Voltage, min.
Conditions
at V
DRM
, Single phase, half wave, Tj＝125℃
at V
DRM
, Single phase, half wave, Tj＝125℃
I
T
=1500A
V
D
＝6V，I
T
＝1A
V
D
＝6V，I
T
＝1A
Tj＝125℃，V
D
＝
1 2
V
DRM
／
Tj＝125℃，V
D
＝
2 3
V
DRM
，exp,
waveform
／
Junction to case
Ratings
150
150
1.45
200
3
0.25
500
0.085
Rth j-c） Thermal Impedance, max.
（
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
SBA500AA
１０
０
５
０
Gate Characteristics
１００
００
On-State Characteristics
Gate Voltage
（V）
２
０
１
０
５
２
１
０５
．
０２
．
０１
．
１
０
２
０
125℃
Maximum Gate Non-Trigger Voltage
Peak Forward Gate Voltag
（10V）
Peak Gate Current
（5A）
25℃ −40℃
Pe
ak
Ga
te
Po
Av
we
era
（
r
ge
15
Ga
W
te
）
Po
we
（5
r
W）
On-State Current
（A）
５０
００
２０
００
Ｔ= ５
½２ ℃
１０
００
５０
０
Maximum
２０
０
１０
０
０５
．
１
１５
．
２
２５
．
０
５ １０ ２０
０ ０
５０ １０ ２０
０ ００ ００
５０ １００
００ ００
Gate Current
（mA）
On-State Voltage
（V）
Per one element
Allowable Case Temperature
（℃）
１０
２０
Average On-State Current Vs Power Dissipation
（Single phase half wave）
１０
３
１０
２
１０
１
１０
０
９
０
８
０
７
０
６
０
５
０
Average On-State Current Vs Maximum Allowable
Case Temperature
（Single phase half wave）
Per one element
Power Dissipation
（W）
１０
００
８０
０
１０
８゜
DC
６０
０
６゜
０
１０
２゜
９゜
０
0
π
θ
360゜
２
π
θ：Conduction Angle
４０
０
２０
０
０
０
３゜
０
0
θ
π
360゜
２
π
θ：Conduction Angle
３゜
０
６ ゜ ９ ゜ １０ １０
０ ０ ２゜ ８゜
DC
１０
０
２０
０
３０
０
４０
０
５０ ６０
０
０
７０
０
８０
０
４
０
０
１０ ２０ ３０ ４０ ５０ ６０ ７０ ８０ ９０
０
０
０
０
０
０
０
０
０
Average On-State Current
（A）
Transient Thermal Impedance
θ
（℃/W）
j-c
Average On-State Current
（A）
１００
２０
Surge On-State Current Rating
（Non-Repetitive）
Per one element
Tj＝25℃ start
０１
．
Transient Thermal Impedance
Per one element
Surge On-State Current
（A）
１００
００
８０
００
６０
００
４０
００
50Hz
００
．
８
００
．
６
Junction to Case
60Hz
００
．
４
２０
００
０
１
００
．
２
０
-３
１
０
２
５
１
０
２
０
５
０
１０
０
１
-２
０
１
-１
０
Time
（cycles）
Time
t
sec）
（
１
０
０
１
１
０
１
２
０
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