BULD741
High voltage fast-switching NPN power transistor
Features
■
■
■
■
High voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
3
1
DPAK
TO-252
IPAK
TO-251
Description
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
1
2
3
Figure 1.
Internal schematic diagram
Applications
■
■
Electronic ballast for fluorescent lighting
Switch mode power supplies.
Table 1.
Device summary
Marking
BULD741
BULD741
Package
DPAK
IPAK
Packaging
Tape & reel
Tube
Order codes
BULD741T4
BULD741-1
July 2007
Rev 2
1/11
www.st.com
11
Electrical ratings
BULD741
1
Electrical ratings
Table 2.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
J
Absolute maximum rating
Parameter
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0, I
B
= 2A, t
P
< 10ms)
Collector current
Collector peak current (t
P
< 5ms)
Base current
Base peak current (t
P
< 5ms)
Total dissipation at T
c
= 25°C
Storage temperature
Max. operating junction temperature
Value
1050
400
V
(BR)EBO
2.5
5
1.5
3
30
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
°C
°C
Table 3.
Symbol
R
thj-case
Thermal data
Parameter
Thermal resistance junction-case
__max
Value
4.16
Unit
°C/W
2/11
BULD741
Electrical characteristics
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 4.
Symbol
I
CES
I
CEO
V
(BR)EBO
Electrical characteristics
Parameter
Collector cut-off current
(V
BE
=0V)
Collector cut-off current
(I
B
=0)
Emitter-base breakdown
voltage (I
C
= 0)
Test conditions
V
CE
=1050V
V
CE
=400V
I
E
=1mA
I
C
=10mA
400
I
C
=0.7A
I
C
=2A
I
C
=2A
I
C
=0.1A
I
C
=0.45A
V
CC
=125V
I
B
=0.14A
I
B
=0.6A
I
B
=0.6A
V
CE
=5V
V
CE
=3V
I
C
=1A
2.5
350
5
3.5
500
µs
ns
mJ
48
25
450
0.15
0.5
1.1
70
35
0.5
1.5
1.5
100
50
V
V
V
V
15
Min.
Typ.
0.2
10
19
Max.
10
250
24
Unit
µA
µA
V
Collector-emitter
V
CEO(sus) (1)
sustaining voltage
(I
B
= 0)
V
CE(sat) (1)
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Resistive load
Storage time
Fall time
Repetitive avalanche
energy
V
BE(sat) (1)
h
FE
t
s
t
f
E
ar
I
B1
= -I
B2
=0.2A t
p
= 300µs
V
BE(off)
=-5V
L =2mH
V
BE(off)
=-5V
C =1.8nF
Note (1) Pulsed duration = 300µs, duty cycle
≤1.5%
3/11
Electrical characteristics
BULD741
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Derating curve
Figure 4.
Output characteristics
Figure 5.
Reverse biased safe
operating area
Figure 6.
DC current gain
Figure 7.
DC current gain
4/11
BULD741
Figure 8.
Base-emitter saturation
voltage
Figure 9.
Electrical characteristics
Collector-emitter saturation
voltage
Figure 10. Resistive load switching on
times
Figure 11. Resistive load switching on
times
Figure 12. Resistive load switching off
times
Figure 13. Resistive load switching off
times
5/11
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