TK19H50C
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
TK19H50C
Switching Regulator Applications
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
: R
DS (ON)
= 0. 25Ω (typ.)
: |Y
fs
| = 14 S (typ.)
Unit: mm
: I
DSS
= 100
μA
(max) (V
DS
= 500 V)
: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
500
500
±30
19
76
150
968
19
15
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
1: GATE
2: DRAIN (HEAT SINK)
3: SOURCE
JEDEC
JEITA
TOSHIBA
―
―
2-16K1A
Weight: 3.8 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
R
th (ch−c)
R
th (ch−a)
Max
0.833
50
Unit
°C / W
°C / W
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 4.56 mH, R
G
= 25
Ω,
I
AR
= 19 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
1
2006-11-06
TK19H50C
Electrical Characteristics
(Ta = 25°C)
Characteristic
Gate leakage current
Gate−source breakdown voltage
Drain cutoff current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
V
(BR) GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
50
Ω
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
400 V, V
GS
= 10 V, I
D
= 19 A
V
GS
10 V
0V
I
D
=
9.5A
出力
R
L
=
21
Ω
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±25 V, V
DS
= 0 V
I
G
= ±10
μA,
V
DS
= 0 V
V
DS
= 500 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 10 V, I
D
= 9.5 A
V
DS
= 10 V, I
D
= 9.5 A
Min
—
±30
—
500
2.0
—
4.0
—
—
—
—
Typ.
—
—
—
—
—
0.25
14
3100
20
270
70
Max
±10
—
100
—
4.0
0.30
—
—
—
—
—
pF
Unit
μA
V
μA
V
V
Ω
S
Turn on time
Switching time
Fall time
—
130
—
ns
V
DD
∼
200 V
−
Duty
<
1%, t
w
=
10
μs
=
—
70
—
Turn off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“Miller”) charge
—
—
—
—
280
62
40
22
—
—
—
—
nC
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
—
—
I
DR
= 19 A, V
GS
= 0 V
I
DR
= 19 A, V
GS
= 0 V
dI
DR
/ dt = 100 A /
μs
Min
—
—
—
—
—
Typ.
—
—
—
1200
18
Max
19
76
−1.7
—
—
Unit
A
A
V
ns
μC
Marking
TOSHIBA
TK19H50C
Part No. (or abbreviation code)
Lot No.
A line indicates a
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-06
TK19H50C
R
DS (ON)
−
Tc
1.0
I
DR
−
V
DS
100
Common source
Tc
=
25°C
Pulse Test
Drain-source ON resistance RDS
(ON)
(Ω)
0.8
Drain reverse current IDR (A)
Common source
VGS
=
10 V
Pulse Test
9.5
0.6
ID
=
19A
0.4
4
10
1
10
5
3
0.2
0
−80
1
0.4
0.6
−40
0
40
80
120
160
0.1
VGS
=
0 V
0.8
1.0
1.2
0
0.2
Case temperature Tc (°C)
Drain-source voltage
VDS
(V)
Capacitance – V
DS
10000
Ciss
5
V
th
−
Tc
Common source
VDS
=
10 V
ID
=
1mA
Pulse Test
Gate threshold voltage Vth (V)
4
1000
(pF)
Coss
Capacitance C
3
100
Crss
10
2
Common source
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
10
100
1
1
0.1
0
−80
−40
0
40
80
120
160
Drain-source voltage
VDS
(V)
Case temperature Tc (°C)
P
D
−
Tc
200
500
VDS
400
Dynamic input / output
characteristics
20
PD (W)
150
16
200V
Drain power dissipation
VDS
100
Drain-source voltage
VDD
=
100V
200
VGS
100
400V
8
Common source
ID
=
19 A
Ta
=
25°C
Pulse Test
50
4
0
0
40
80
120
160
200
0
0
20
40
60
80
0
100
Case temperature Tc (°C)
Total gate charge Qg (nC)
4
2006-11-06
Gate-source voltage
300
12
VGS (V)
(V)
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