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NP40N055ELE

Description
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
File Size199KB,10 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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NP40N055ELE Overview

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP40N055ELE, NP40N055KLE
NP40N055CLE, NP40N055DLE, NP40N055MLE, NP40N055NLE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP40N055ELE-E1-AY
NP40N055ELE-E2-AY
NP40N055KLE-E1-AY
NP40N055KLE-E2-AY
Note1, 2
Note1, 2
Note1
Note1
Note1, 2
Note1, 2
Note1
Note1
LEAD PLATING
PACKING
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZK) typ. 1.5 g
NP40N055CLE-S12-AZ
NP40N055DLE-S12-AY
NP40N055MLE-S18-AY
NP40N055NLE-S18-AY
Sn-Ag-Cu
Tube 50 p/tube
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
Pure Sn (Tin)
Notes 1.
Pb-free (This product does not contain Pb in the external electrode.)
2.
Not for new design
(TO-220)
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
R
DS(on)1
= 23 mΩ MAX. (V
GS
= 10 V, I
D
= 20 A)
R
DS(on)2
= 28 mΩ MAX. (V
GS
= 5.0 V, I
D
= 20 A)
R
DS(on)3
= 32 mΩ MAX. (V
GS
= 4.5 V, I
D
= 20 A)
Low input capacitance
C
iss
= 1300 pF TYP.
Built-in gate protection diode
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14093EJ7V0DS00 (7th edition)
Date Published October 2007 NS
Printed in Japan
1999, 2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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