DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N04EHE, NP80N04KHE
NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP80N04EHE-E1-AY
NP80N04EHE-E2-AY
NP80N04KHE-E1-AY
NP80N04KHE-E2-AY
Note1, 2
Note1, 2
Note1
Note1
Note1, 2
Note1, 2
Note1
Note1
LEAD PLATING
PACKING
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZK) typ. 1.5 g
NP80N04CHE-S12-AZ
NP80N04DHE-S12-AY
NP80N04MHE-S18-AY
NP80N04NHE-S18-AY
Sn-Ag-Cu
Tube 50 p/tube
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
Pure Sn (Tin)
Notes 1.
Pb-free (This product does not contain Pb in the external electrode.)
2.
Not for new design
(TO-220)
FEATURES
•
Channel temperature 175 degree rated
•
Super low on-state resistance
R
DS(on)
= 8.0 mΩ MAX. (V
GS
= 10 V, I
D
= 40 A)
•
Low input capacitance
C
iss
= 2200 pF TYP.
•
Built-in gate protection diode
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14239EJ7V0DS00 (7th edition)
Date Published October 2007 NS
Printed in Japan
1999, 2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (Pulse)
Note2
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
40
±20
±80
±280
1.8
120
175
−55
to
+175
52/31/13
2.7/96/169
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
I
AS
E
AS
Notes 1.
Calculated constant current according to MAX. allowable channel temperature.
2.
PW
≤
10
μ
s, Duty cycle
≤
1%
3.
Starting T
ch
= 25°C, R
G
= 25
Ω,
V
GS
= 20
→
0 V (See
Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
1.25
83.3
°C/W
°C/W
2
Data Sheet D14239EJ7V0DS
NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristics
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
I
DSS
I
GSS
V
GS(th)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 32 V,
V
GS
= 10 V,
I
D
= 80 A
I
F
= 80 A, V
GS
= 0 V
I
F
= 80 A, V
GS
= 0 V,
di/dt = 100 A/
μ
s
Test Conditions
V
DS
= 40 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 10 V, I
D
= 40 A
V
GS
= 10 V, I
D
= 40 A
V
DS
= 25 V,
V
GS
= 0 V,
f = 1 MHz
V
DD
= 20 V, I
D
= 40 A,
V
GS
= 10 V,
R
G
= 1
Ω
2.0
15
3.0
31
6.2
2200
490
230
24
14
44
15
40
12
16
1.0
40
50
8.0
3300
730
410
52
36
88
37
60
MIN.
TYP.
MAX.
10
±10
4.0
Unit
μ
A
μ
A
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
μs
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
Data Sheet D14239EJ7V0DS
3
NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE
TYPICAL CHARACTERISTICS (T
A
= 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
140
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
0
120
100
80
60
40
20
0
0
25
50
75
100 125 150 175 200
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
0
25
50
75
100 125 150 175 200
T
C
- Case Temperature -
°C
Figure3. FORWARD BIAS SAFE OPERATING AREA
Single Pulse Avalanche Energy - mJ
1000
I
D(pulse)
I
D
- Drain Current - A
100
d
ite )
Lim0 V
)
on
S(
=1
R
D
V
GS
(
PW
=1
0
μ
T
C
- Case Temperature -
°C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
180
160
140
120
100
96 mJ
80
60
40
20
0
25
2.7 mJ
169 mJ
I
D(DC)
Po
DC
Lim wer
ite Dis
sip
d
ati
on
10
1m
s
0
μ
s
s
10
I
AS
= 13 A
31 A
52 A
1
T
C
= 25°C
Single pulse
0.1
0.1
1
10
100
50
75
100
125
150
175
V
DS
- Drain to Source Voltage - V
Starting T
ch
- Starting Channel Temperature -
°C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
100
R
th(ch-A)
= 83.3°C/W
10
1
R
th(ch-C)
= 1.25°C/W
0.1
Single pulse
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
4
Data Sheet D14239EJ7V0DS
NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
300
250
I
D
- Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10
T
A
=
−40°C
25°C
75°C
150°C
175°C
I
D
- Drain Current - A
100
V
GS
= 10 V
200
150
100
50
1
0.1
1
2
3
4
V
DS
= 10 V
5
6
0
0
1
2
3
Pulsed
4
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
| y
fs
| - Forward Transfer Admittance - S
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
V
DS
= 10 V
Pulsed
10
T
A
= 175°C
75°C
25°C
−40°C
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
40
30
20
10
0
1
0.1
I
D
= 40 A
0.01
0.01
0.1
1
10
100
0
2
4
6
8
10
12
14
16
18
I
D
- Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
Pulsed
V
GS
- Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4.0
V
DS
= V
GS
I
D
= 250
μA
R
DS(on)
- Drain to Source On-state Resistance - mΩ
V
GS(th)
- Gate to Source Threshold Voltage - V
3.0
10
V
GS
= 10 V
2.0
1.0
0
0
1
10
100
1000
−50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature -
°C
Data Sheet D14239EJ7V0DS
5
Embedded System
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