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83CNQ080GA

Description
80 A, 80 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size214KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

83CNQ080GA Overview

80 A, 80 V, SILICON, RECTIFIER DIODE

83CNQ080GA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionR-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.67 V
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Maximum non-repetitive peak forward current5800 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current80 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
surface mountNO
technologySCHOTTKY
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Preliminary Data Sheet PD-20809 09/04
83CNQ...GA
83CNQ...GASM
83CNQ...GASL
SCHOTTKY RECTIFIER
New GenIII D-61 Package
80 Amp
I
F(AV)
= 80Amp
V
R
= 80-100V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
range
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 40 Apk, T
J
= 125°C
(per leg)
range
Description/ Features
Units
A
V
A
V
The 83CNQ...AG center tap Schottky rectifier module series
has been optimized for low reverse leakage at high tempera-
ture. The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical applica-
tions are in switching power supplies, converters, free-wheel-
ing diodes, and reverse battery protection.
175 °C T
J
operation
Center tap module
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Values
80
80 - 100
5800
0.67
- 55 to 175
°C
New fully transfer-mold low profile, small
footprint, high current package
Case Styles
83CNQ...GA
83CNQ...GASM
83CNQ...GASL
D61-8
D61-8-SM
D61-8-SL
1

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